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參數(shù)資料
型號: 2SC2351
廠商: NEC Corp.
英文描述: HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
中文描述: 高頻低噪聲放大器NPN硅外延晶體管微型模具
文件頁數(shù): 1/4頁
文件大小: 30K
代理商: 2SC2351
SILICON TRANSISTOR
2SC2351
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
DATA SHEET
Document No. P10350EJ3V1DS00 (3rd edition)
Date Published March 1997 N
Printed in Japan
1984
FEATURES
NF
MAG
1.5 dB TYP.
14 dB
@ f = 1.0 GHz
@ f = 1.0 GHz
TYP.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
25
12
3.0
70
250
150
V
V
V
mA
mW
°
C
°
C
65 to +150
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
I
CBO
0.1
μ
A
V
CB
= 15 V, I
E
= 0
Emitter Cutoff Current
I
EBO
0.1
μ
A
V
EB
= 2.0 V, I
C
= 0
DC Current Gain
h
FE
40
200
V
CE
= 10 V, I
C
= 20 mA
Gain Bandwidth Product
f
T
4.5
GHz
V
CE
= 10 V, I
C
= 20 mA
Output Capacitance
C
ob
0.75
1.0
pF
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
Insertion Power Gain
S
21
e
2
9
11
dB
V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
Noise Figure
NF
1.5
3.0
dB
V
CE
= 10 V, I
C
= 5 mA, f = 1.0 GHz
Maximum Available Gain
MAG
14
dB
V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
h
FE
Classification
Class
E/P *
F/Q *
Marking
R2
R3
h
FE
40 to 120
100 to 200
* Old Specification / New Specification
PACKAGE DIMENSIONS
(Units: mm)
1.5
2
1
3
Marking
PIN CONNECTIONS
1.
2.
3.
Collector
Emitter
Base
2.8±0.2
2
1
0
0
0
0
0
+
0
0
+
0
0
+
0
0.65
+0.1
0.15
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相關代理商/技術參數(shù)
參數(shù)描述
2SC2351-E 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 70MA I(C) | SOT-346
2SC2351-F 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 70MA I(C) | SOT-346
2SC2351-P 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 70MA I(C) | SOT-346
2SC2351-Q 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 70MA I(C) | SOT-346
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