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參數資料
型號: 2SC2480
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: Silicon NPN epitaxial planer type(For high-frequency amplification / oscillation / mixing)
中文描述: VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236
封裝: ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN
文件頁數: 1/4頁
文件大小: 253K
代理商: 2SC2480
1
Transistors
Publication date: June 2006
SJC00116CED
2SC2480
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
■ Features
High transition frequency f
T
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
30
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
3V
Collector current
IC
50
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC
= 100 A, I
E
= 030
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 03
V
Base-emitter voltage
VBE
VCB = 10 V, IE = 2 mA
720
mV
Forward current transfer ratio
hFE
VCB
= 10 V, I
E
= 2 mA
25
250
Transition frequency *
fT
VCB = 10 V, IE = 15 mA, f = 200 MHz
800
1 300
1 600
MHz
Reverse transfer capacitance
Crb
VCE = 6 V, IC = 0, f = 1 MHz
0.8
pF
(Common base)
Reverse transfer capacitance
Cre
VCB = 10 V, IE = 1 mA, f = 10.7 MHz
1.0
1.5
pF
(Common emitter)
Power gain
GP
VCB = 10 V, IE = 1 mA, f = 200 MHz
20
dB
Unit: mm
■ Electrical Characteristics T
a
= 25°C ± 3°C
1: Base
2: Emitter
3: Collector
JEITA: SC-59A
Mini3-G1 Package
0.40
+0.10
–0.05
(0.65)
1.50
+0.25 –0.05
2.8
+0.2 –0.3
2
1
3
(0.95) (0.95)
1.9±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±
0.2
5
10
0
to
0.1
1.1
+0.2 –0.1
1.1
+0.3 –0.1
Marking Symbol: R
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
T
S
No-rank
fT
800 to 1 400
1 000 to 1 600
800 to 1 600
Marking symbol
RT
RS
R
Product of no-rank is not classified and have no indication for rank.
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相關PDF資料
PDF描述
2SC2631 Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)
2SC2632 Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)
2SC2634 Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)
2SC2636 Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation)
2SC2647 Silicon NPN epitaxial planer type(For high-frequency amplification)
相關代理商/技術參數
參數描述
2SC248000L 功能描述:TRANS NPN HF AMP 20VCEO MINI 3P RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應商設備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
2SC2480S 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 50MA I(C) | TO-236
2SC2480T 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 50MA I(C) | TO-236
2SC2480-T-TX 制造商:Panasonic Industrial Company 功能描述:
2SC2481 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistor
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