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參數資料
| 型號： | 2SC2878-B |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | 2-5F1B, SC-43, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 277K |
| 代理商： | 2SC2878-B |
2SC2878
2003-03-25
1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC2878
For Muting and Switching Applications
High emitter-base voltage: VEBO = 25 V (min)
High reverse hFE: Reverse hFE = 150 (typ.) (VCE = 2 V, IC = 4 mA)
Low on resistance: RON = 1 (typ.) (IB = 5 mA)
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
25
V
Collector current
IC
300
mA
Base current
IB
60
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 50 V, IE = 0
0.1
A
Emitter cut-off current
IEBO
VEB = 25 V, IC = 0
0.1
A
DC current gain
hFE
(Note)
VCE = 2 V, IC = 4 mA
200
1200
Collector-emitter saturation voltage
VCE (sat)
IC = 30 mA, IB = 3 mA
0.042
0.1
V
Base-emitter voltage
VBE
VCE = 2 V, IC = 4 mA
0.61
V
Transition frequency
fT
VCE = 6 V, IC = 4 mA
30
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
4.8
7
pF
Turn-on time
ton
160
Storage time
tstg
500
Switching time
Fall time
tf
Duty cycle <= 2%
130
ns
Note: hFE classification A: 200~700, B: 350~1200
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC2878-B(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC2879 | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 18V 25A 4-Pin 2-13B1A |
| 2SC2879A | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 18V 25A 4-Pin 2-13B1A |
| 2SC2880-Y(T2LHM,CF | 制造商:Toshiba America Electronic Components 功能描述:TRANS GP BJT NPN - Tape and Reel |
| 2SC2880-Y(TE12L,CF | 制造商:Toshiba America Electronic Components 功能描述:TRANS GP BJT NPN - Tape and Reel |
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