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參數(shù)資料
| 型號(hào)： | 2SC2904 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 22 A, 20 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | 0.500 INCH, FM-6 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 28K |
| 代理商： | 2SC2904 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS T
C = 25 °C
SYMBOL
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 20 mA
50
V
BVCEO
IC = 100 mA
20
BVEBO
IE = 20 mA
4.0
V
ICBO
VCB = 15 V
5.0
mA
IEBO
VCB = 3.0 V
5.0
mA
hFE*
VCE = 10 V
IC = 1.0 A
10
180
---
PO
η
C
VCE = 12.5 V
PIN = 7.0 W
f = 30 MHz
100
55
110
60
W
%
NOTE: *Pulse test, PW=150S. duty=5%
NPN SILICON RF POWER TRANSISTOR
2SC2904
DESCRIPTION:
The
ASI 2SC2904 is a silicon
epitaxial plana type transistor designed
for high power amplifiers in HF band.
FEATURES:
Internal Input Matching Network
P
G = 11.5 dB at 1000 W/30 MHz
Omnigold Metalization System
MAXIMUM RATINGS
IC
22 A
VCBO
50 V
VCEO
20 V
VEBO
4.0 V
PDISS
200 W @ TC = 25 °C
TJ
-55 °C to +175 °C
TSTG
-55 °C to +175 °C
θ
JC
0.75 °C/W
PACKAGE STYLE .500 6L FLG
Common Emitter configuration
MIN IMU M
inches / m m
.490 / 12.45
.210 / 5.33
.003 / 0.08
B
C
D
E
F
G
A
MA XIM U M
.220 / 5.59
.007 / 0.18
.510 / 12.95
inches / m m
.725 / 18.42
H
DIM
K
L
I
J
.970 / 24.64
.980 / 24.89
.170 / 4.32
N
M
.120 / 3.05
.135 / 3.43
.150 / 3.43
.160 / 4.06
.125 / 3.18
.090 / 2.29
.105 / 2.67
.285 / 7.24
.150 / 3.81
.045 / 1.14
E
F
.725/18,42
I
G
J
K
L
M
A
D
C
B
2x N
FU LL R
H
.835 / 21.21
.865 / 21.97
.210 / 5.33
.200 / 5.08
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC2909S | 制造商:ON Semiconductor 功能描述: |
| 2SC2909S-AA | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR NPN 160V 0.07A TO-92 |
| 2SC2910 | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR NPN SC-51 |
| 2SC2910S | 制造商:n/a 功能描述:2SC2910S S3B2A |
| 2SC2911 | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR NPN TO-126 |
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