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參數資料
| 型號： | 2SC3312 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | ECONOLINE: RSZ/P - 1kVDC |
| 中文描述： | 100 mA, 55 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, NS-B1, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 37K |
| 代理商： | 2SC3312 |
1
Transistor
2SC3312
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SA1310
I
Features
G
Optimum for high-density mounting.
G
Allowing supply with the radial taping.
G
Low noise voltage NV.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
4.0
±
0.2
marking
2.54
±
0.15
1.27
1.27
3
±
0
1
±
0
2
±
0
0
±
0
0
1
2
3
+
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
60
55
7
200
100
300
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise voltage
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
V
BE
f
T
NV
Conditions
V
CB
= 20V, I
E
= 0
V
CE
= 20V, I
B
= 0
I
C
= 10
μ
A, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 5V, I
C
= 2mA
I
C
= 100mA, I
B
= 10mA
V
CE
= 1V, I
C
= 30mA
V
CB
= 5V, I
E
= –2mA, f = 200MHz
V
CE
= 10V, I
C
= 1mA, G
V
= 80dB
R
g
= 100k
, Function = FLAT
min
60
55
7
180
typ
200
max
0.1
1
700
1
1
150
Unit
μ
A
μ
A
V
V
V
V
V
MHz
mV
*
h
FE
Rank classification
Rank
R
S
T
h
FE
180 ~ 360
260 ~ 520
360 ~ 700
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC3313 | Silicon NPN epitaxial planer type(Silicon NPN epitaxial planer type) |
| 2SC3314 | Silicon NPN epitaxial planer type(For high-frequency amplification) |
| 2SC3315 | Silicon NPN epitaxial planer type(For high-frequency amplification) |
| 2SC3324 | NPN EPITAXIAL TYPE (AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS) |
| 2SC3325 | NPN EPITAXIAL TYPE (AUDIO FREQUENCY SOW POWER, DRIVER STAGE AMPLIFIER, SWITCHING APPLICATIONS) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC33120RA | 功能描述:TRANS NPN 55VCEO 100MA NS-B1 RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SC3312R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 55V V(BR)CEO | 100MA I(C) | SPAK |
| 2SC3312S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 55V V(BR)CEO | 100MA I(C) | SPAK |
| 2SC3312T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 55V V(BR)CEO | 100MA I(C) | SPAK |
| 2SC3313 | 制造商:Distributed By MCM 功能描述:SUB ONLY MATSUSHITA TRANSISTOR S-TYPE 30V .03A .3W ECB |
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