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參數資料
| 型號： | 2SC3356 |
| 廠商： | NEC Corp. |
| 英文描述： | Microwave Low Noise NPN Transistor(微波低噪聲NPN晶體管) |
| 中文描述： | 微波低噪聲NPN晶體管（微波低噪聲npn型晶體管） |
| 文件頁數： | 1/8頁 |
| 文件大小： | 91K |
| 代理商： | 2SC3356 |
DATA SHEET
SILICON TRANSISTOR
2SC3356
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
Document No. P10356EJ5V1DS00 (5th edition)
Date Published March 1997 N
Printed in Japan
1985
DESCRIPTION
The 2SC3356 is an NPN silicon epitaxial transistor designed for low
noise amplifier at VHF, UHF and CATV band.
It has dynamic range and good current characteristic.
FEATURES
Low Noise and High Gain
NF = 1.1 dB TYP., G
a
= 11 dB TYP. @V
CE
= 10 V, I
C
= 7 mA, f = 1.0 GHz
High Power Gain
MAG = 13 dB TYP. @V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
20
12
3.0
100
200
150
V
V
V
mA
mW
C
C
65 to +150
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
I
CBO
1.0
A
V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current
I
EBO
1.0
A
V
EB
= 1.0 V, I
C
= 0
DC Current Gain
h
FE
*
50
120
300
V
CE
= 10 V, I
C
= 20 mA
Gain Bandwidth Product
f
T
7
GHz
V
CE
= 10 V, I
C
= 20 mA
Feed-Back Capacitance
C
re
**
0.55
1.0
pF
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
Insertion Power Gain
S
21
e
2
11.5
dB
V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
Noise Figure
NF
1.1
2.0
dB
V
CE
= 10 V, I
C
= 7 mA, f = 1.0 GHz
*
** The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.
h
FE
Classification
Pulse Measurement PW 350 s, Duty Cycle 2 %
Class
R23/Q *
R24/R *
R25/S *
Marking
R23
R24
R25
h
FE
50 to 100
80 to 160
125 to 250
* Old Specification / New Specification
PACKAGE DIMENSIONS
(Units: mm)
1.5
2
1
3
Marking
PIN CONNECTIONS
1.
2.
3.
Collector
Emitter
Base
2.8±0.2
2
1
0
0
0
0
0
+
0
0
+
0
0
+
0
0.65
+0.1
0.15
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC3357 | NPN Silicon Epitaxial Transistor(NPN 硅外延晶體管) |
| 2SC3357RE | TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | TO-243 |
| 2SC3357RF | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 2SC3357RH | TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | TO-243 |
| 2SC3359S | Power Transistor (80V, 0.3A) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC3356(M)-T1B | 制造商: 功能描述:2SC3356(M)-T1B |
| 2SC3356(NE85633) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| 2SC3356_09 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER |
| 2SC3356_11 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER |
| 2SC3356-A | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:NPN Silicon RF Transistor |
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