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參數資料
| 型號： | 2SC3359STP/R |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 300 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SPT, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 69K |
| 代理商： | 2SC3359STP/R |
2SC3359S
Transistors
Rev.A
1/2
Power Transistor (80V, 0.3A)
2SC3359S
Features
1) High breakdown voltage, BVCEO=80V
2) Low saturation voltage, typically VCE(sat) =0.2V at IB=0.3A / 0.03A
Electrical characteristics (Ta=25
°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
PC
Tj
Tstg
Limits
80
5
0.3
150
55 to +150
Unit
V
A
W
C
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Absolute maximum ratings (Ta=25
°C)
Symbol
Min.
Typ.
Max.
Unit
Conditions
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
h
FE
f
T
Cob
80
5
50
0.2
150
5
0.5
8
V
MHz
pF
IC
=50A
VCB
=80V
VEB
=4V
VC/ICB
=0.3V/0.03A
VCE
=5V , I
E
=0.01A , f=100MHz
VCB
=10V , I
E
=0A , f=1MHz
IC
=1mA
IE
=50A
A
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector outoff current
Emitter outoff current
DC current transfer ratio
Transition frequency
Output capacitance
Collector-emitter saturation voltage
V
CE(sat)
120
390
VCE
=3V, I
C
=0.1A
A
Packaging specification and hFE
Type
Package
hFE
Code
Basic orderin unit (pieces)
2SC3359S
SPT
QR
TP
5000
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相關代理商/技術參數 |
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|---|---|
| 2SC3360 | 制造商:NEC 制造商全稱:NEC 功能描述:HIGH VOLTAGE AMPLIFIER AND SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
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| 2SC3360N16 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| 2SC3360N17 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| 2SC3360T1B | 制造商:NEC 功能描述:* |
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