欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: 2SC4150
元件分類: 功率晶體管
英文描述: 12 A, 40 V, NPN, Si, POWER TRANSISTOR
封裝: ITO-220, 3 PIN
文件頁數: 1/8頁
文件大小: 288K
代理商: 2SC4150
Unit : mm
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
RATINGS
SHINDENGEN
LSV Series
Switching Power Transistor
OUTLINE DIMENSIONS
Case : ITO-220
12A NPN
2SC4150
(TP12S4)
Absolute Maximum Ratings
Item
Symbol
Conditions
Ratings
Unit
Storage Temperature
Tstg
-55`150
Junction Temperature
Tj
150
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
40
V
Emitter to Base Voltage
VEBO
7V
Collector Current DC
IC
12
A
Collector Current Peak
ICP
24
A
Base Current DC
IB
2A
Base Current Peak
IBP
3A
Total Transistor Dissipation
PT
Tc = 25
25
W
Dielectric Strength
Vdis
Terminal to case, AC 1 mitute
2
kV
Mounting Torque
TOR
(Recommended torque : 0.3Nmj
0.5
Nm
Electrical Characteristics (Tc=25)
Item
Symbol
Conditions
Ratings
Unit
Collector to Emitter Sustaining Voltage
VCEO(sus)
IC = 0.1A
Min 40
V
Collector Cutoff Current
ICBO
At rated Voltage
Max 0.1
mA
ICEO
Max 0.1
Emitter Cutoff Current
IEBO
At rated Voltage
Max 0.1
mA
DC Current Gain
hFE
VCE = 2V, IC = 6A
Min 70
Collector to Emitter Saturation Voltage
VCE(sat)
IC = 6A
Max 0.3
V
Base to Emitter Saturation Voltage
VBE(sat)
IB = 0.3A
Max 1.2
V
Thermal Resistance
jc
Junction to case
Max 5
/W
Transition Frequency
fT
VCE = 10V, IC = 1.2A
TYP 50
MHz
Turn on Time
ton
Max 0.3
IC = 6A
Storage Time
ts
IB1 = 0.6A, IB2 = 0.6A
Max 1.5
s
RL = 5, VBB2 = 4V
Fall Time
tf
Max 0.5
相關PDF資料
PDF描述
2SC4184 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC4196QI-TR-E UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC4196 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC4201 Si, NPN, RF POWER TRANSISTOR, TO-220AB
2SC4213 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
相關代理商/技術參數
參數描述
2SC4151 制造商:SHINDENGEN 制造商全稱:Shindengen Electric Mfg.Co.Ltd 功能描述:Switching Power Transistor(15A NPN)
2SC4151-4000 功能描述:兩極晶體管 - BJT VCEO=40 IC=15 HFE=70 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC4152 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
2SC4153 制造商:Sanken Electric Co Ltd 功能描述:Trans GP BJT NPN 120V 7A 3-Pin (3+Tab) TO-220F Box 制造商:Sanken Electric Co Ltd 功能描述:Trans GP BJT NPN 120V 7A 3-Pin (3+Tab) TO-220F Bulk 制造商:Sanken Electric Co Ltd 功能描述:TRANS NPN 120V 7A TO220F
2SC4153_01 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:Silicon NPN Triple Diffused Planar Transistor
主站蜘蛛池模板: 九龙坡区| 吴川市| 陇川县| 安岳县| 江安县| 乌拉特前旗| 长乐市| 河源市| 罗田县| 枝江市| 无棣县| 通海县| 江孜县| 石台县| 阿瓦提县| 梁河县| 孝义市| 阳山县| 南投市| 东乡| 临沂市| 收藏| 咸阳市| 太和县| 嫩江县| 桂东县| 崇信县| 伊金霍洛旗| 枣阳市| 上高县| 弋阳县| 从化市| 冕宁县| 亚东县| 镇平县| 辰溪县| 永顺县| 临西县| 乐都县| 安乡县| 武宣县|