欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: 2SC4208
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: Silicon NPN epitaxial planer type(For low-frequency output amplification and driver amplification)
中文描述: 500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: ROHS COMPLIANT, TO-92NL-A1, 3 PIN
文件頁數: 1/3頁
文件大小: 47K
代理商: 2SC4208
1
Transistor
2SC4208, 2SC4208A
Silicon NPN epitaxial planer type
For low-frequency output amplification and driver amplification
Complementary to 2SA1619 and 2SA1619A
I
Features
G
Low collector to emitter saturation voltage V
CE(sat)
.
G
Output of 1W is obtained with a complementary pair with
2SA1619 and 2SA1619A.
G
Allowing supply with the radial taping.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
TO–92NL Package
5.0
±
0.2
1
±
0
0
±
0
8
±
0
1.27
1
2
3
1.27
4.0
±
0.2
0.45
+0.15
–0.1
0.45
+0.15
–0.1
2
±
0
0.7
±
0.1
2.54
±
0.15
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
30
60
25
50
7
1
500
1
150
–55 ~ +150
Unit
V
V
V
A
mA
W
C
C
2SC4208
2SC4208A
2SC4208
2SC4208A
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
I
C
= 10
μ
A, I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 10V, I
C
= 150mA
*2
V
CE
= 10V, I
B
= 500mA
*2
I
C
= 300mA, I
B
= 30mA
I
C
= 300mA, I
B
= 30mA
V
CB
= 10V, I
E
= –50mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
30
60
25
50
7
85
40
typ
0.35
1.1
150
6
max
0.1
340
0.6
1.5
15
Unit
μ
A
V
V
V
V
V
MHz
pF
*1
h
FE1
Rank classification
Rank
Q
R
S
h
FE1
85 ~ 170
120 ~ 240
170 ~ 340
*2
Pulse measurement
2SC4208
2SC4208A
2SC4208
2SC4208A
相關PDF資料
PDF描述
2SC4208A Silicon NPN epitaxial planer type(For low-frequency output amplification and driver amplification)
2SC4209 NPN EPITAXIAL YTP (DRIVER STAGE, VOLTAGE AMPLIFIER APPLICATIONS)
2SC4210 NPN EPITAXIAL TYPE (AUDIO POWER AMPLIFIER APPLICATIONS)
2SC4212 Silicon NPN triple diffusion planar type
2SC4213 NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHIG APPLICATIONS)
相關代理商/技術參數
參數描述
2SC4208/2SC4208A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SC4208. 2SC4208A - NPN Transistor
2SC4208A 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer type(For low-frequency output amplification and driver amplification)
2SC4208AQ 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 500MA I(C) | TO-92VAR
2SC4208AR 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 500MA I(C) | TO-92VAR
2SC4208ARA 功能描述:TRANS NPN 50VCEO .5A TO-92NL RoHS:否 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應商設備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
主站蜘蛛池模板: 襄城县| 博客| 城口县| 石河子市| 霸州市| 临澧县| 衡阳市| 虹口区| 庆阳市| 宿松县| 余江县| 望江县| 太仓市| 东明县| 建水县| 黔西县| 个旧市| 炉霍县| 孝昌县| 唐河县| 渭南市| 通山县| 水富县| 黄梅县| 鹤岗市| 镇安县| 太原市| 信宜市| 白朗县| 黑河市| 呼图壁县| 临海市| 阿图什市| 朝阳区| 日土县| 萍乡市| 东光县| 斗六市| 龙海市| 武清区| 沾益县|