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參數(shù)資料
| 型號： | 2SC4212 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion planar type |
| 中文描述： | 0.2 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 封裝： | ROHS COMPLIANT, TO-126B-A1, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 60K |
| 代理商： | 2SC4212 |
Power Transistors
2SC4212
Silicon NPN triple diffusion planar type
1
For color TV horizontal deflection driver
I
Features
High collector to emitter voltage V
CEO
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
I
Absolute Maximum Ratings
T
C
=
25
°
C
1 : Emitter
2 : Collector
3 : Base
TO-126B Package
Unit: mm
I
Electrical Characteristics
T
C
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
350
V
Collector to emitter voltage
V
CEO
V
EBO
I
CP
300
V
Emitter to base voltage
7.5
V
Peak collector current
400
mA
Collector current
I
C
P
C
200
1.2
*1
5
*2
mA
Collector power dissipation
W
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
I
EBO
V
CBO
V
CB
= 200 V, I
E
= 0
V
EB
= 5 V, I
C
= 0
I
C
= 100
μ
A, I
E
= 0
2
μ
A
μ
A
Emitter cutoff current
2
Collector to base voltage
350
V
Collector to emitter voltage
V
CEO
V
EBO
h
FE
I
C
= 5 mA, I
B
= 0
I
E
= 100
μ
A, I
C
= 0
V
CE
= 10 V, I
C
= 10 mA
300
V
Emitter to base voltage
7.5
V
Forward current transfer ratio
40
250
Collector to emitter saturation voltage
V
CE(sat)
f
T
C
ob
I
C
= 50 mA, I
B
= 5 mA
V
CB
= 30 V, I
E
=
10 mA, f = 200 MHz
V
CB
= 50 V, I
E
= 0, f = 1 MHz
1
V
Transition frequency
50
MHz
Collector output capacitance
4.5
pF
Note)*1: Without heat sink
*2: With a 100
×
100
×
2 mm A1 heat sink
8.0
+0.5
1
±
3
±
3
±
1
±
1
±
3.2
±0.2
0.75
±0.1
0.5
±0.1
2.3
±0.2
4.6
±0.2
0.5
±0.1
1.76
±0.1
1
2
3
φ
3.16
±0.1
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| 2SC4230 | Switching Power Transistor(2A NPN) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC4212H | 功能描述:TRANS NPN HF 300VCEO .2A TO-126 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SC4212HLB | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC4212H-LB | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC4213 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:Silicon NPN Epitaxial |
| 2SC4213_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications |
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