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參數資料
型號: 2SC4553
廠商: NEC Corp.
英文描述: NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
中文描述: NPN硅外延的高晶體管高速開關
文件頁數: 1/6頁
文件大小: 126K
代理商: 2SC4553
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
Document No. D15599EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SC4553
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
The 2SC4553 is a power transistor designed especially for low
collector saturation voltage and features large current switching at a
low power dissipation. In addition, a high h
FE
enables alleviation of
the driver load.
FEATURES
High h
FE
and low V
CE(sat)
:
h
FE
800 (V
CE
= 2 V, I
C
= 3 A)
V
CE(sat)
0.12 V (I
C
= 3 A, I
B
= 0.03 A)
On-chip C to E damper diode
Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
100
V
Collector to emitter voltage
V
CEO
100
V
Emitter to base voltage
V
EBO
7.0
V
Collector current (DC)
I
C(DC)
±
7.5
A
Collector current (pulse)
I
C(pulse)
*
±
10
A
Base current (DC)
I
B(DC)
2.0
A
Total power dissipation
P
T
(Tc = 25
°
C)
30
W
Total power dissipation
P
T
(Ta = 25
°
C)
2.0
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
* PW
10 ms, duty cycle
50%
PACKAGE DRAWING (UNIT: mm)
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相關代理商/技術參數
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