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參數資料
| 型號： | 2SC4568 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TRANSISTOR UHF TV TUNER OSC/MIXER |
| 中文描述： | NPN硅外延晶體管超高頻電視調諧器振蕩器/混合機 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 51K |
| 代理商： | 2SC4568 |
DATA SHEET
SILICON TRANSISTOR
2SC4568
NPN SILICON EPITAXIAL TRANSISTOR
UHF TV TUNER OSC/MIXER
Document No. P10373EJ2V1DS00 (2nd edition)
Date Published March 1997 N
Printed in Japan
1989
DESCRIPTION
The 2SC4568 is an NPN silicon epitaxial transistor intended for use as
UHF oscillator and UHF mixer in a tuner of TV receiver.
FEATURES
High gain bandwidth product
f
T
= 5.5 GHz TYP.
Low output capacitance
C
ob
= 0.7 pF TYP.
Surface mount package
EIAJ: SC-59
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Maximum Voltages and Current
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
20
12
3.0
30
150
125
V
V
V
mA
mW
C
C
55 to +125
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
I
CBO
0.1
A
V
CB
= 15 V, I
E
= 0
Emitter Cutoff Current
I
EBO
0.1
A
V
EB
= 1 V, I
C
= 0
Collector Saturation Voltage
V
CE(sat)
0.5
V
h
FE
= 10, I
C
= 5 mA
DC Current Gain
h
FE
40
100
200
V
CE
= 5 V, I
C
= 5 mA
*1
Gain Bandwidth Product
f
T
5.5
GHz
V
CE
= 5 V, I
C
= 5 mA, f = 1.0 GHz
Output Capacitance
C
ob
0.7
0.9
pF
V
CB
= 5 V, I
E
= 0, f = 1.0 MHz
Insertion Gain
S
21e
2
5.0
dB
V
CE
= 5 V, I
C
= 5 mA, f = 1.0 MHz
*1
Pulsed: PW = 35 S, Duty Cycle 2 %
h
FE
Classification
Class
T72
T73
T74
Marking
T72
T73
T74
h
FE
40 to 80
60 to 120
100 to 200
PACKAGE DIMENSIONS
(Units: mm)
1.5
2
1
3
Marking
PIN CONNECTIONS
1.
2.
3.
Collector
Emitter
Base
2.8±0.2
2
1
0
0
0
0
0
+
0
0
+
0
0
+
0
0.65
+0.1
0.15
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| 2SC4570-T1-A(T73) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SC4571-T1-A-T76 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC4572-RA7 | 制造商:Sony Semiconductor Solutions Division 功能描述: |
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| 2SC4580-7100 | 功能描述:兩極晶體管 - BJT VCEO=450 IC=8 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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