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參數(shù)資料
| 型號(hào)： | 2SC4954-T1FB |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | MINIMOLD PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 91K |
| 代理商： | 2SC4954-T1FB |
DATA SHEET
SILICON TRANSISTOR
2SC4954
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
FEATURES
Low Noise, High Gain
Low Voltage Operation
Low Feedback Capacitance
Cre = 0.3 pF TYP.
ORDERING INFORMATION
PART
QUANTITY
PACKING STYLE
NUMBER
2SC4954-T1
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin3 (Collector) face to perforation side of the
tape.
2SC4954-T2
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin1 (Emitter), Pin2 (Base) face to perforation
side of the tape.
*
To order evaluation samples, contact your nearby sales office.
Unit sample quantity shall be 50 pcs. (Part No.: 2SC4954)
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage
VCBO
9V
Collector to Emitter Voltage
VCEO
6V
Emitter to Base Voltage
VEBO
2V
Collector Current
IC
10
mA
Total Power Dissipation
PT
60
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
–65 to +150
C
2.9±0.2
0.95
0.4
–
0.05
+0.1
1.5
0.4
–
0.05
+0.1
2.8±0.2
0.65 –0.15
+0.1
3
2
1
0.16
–
0.06
+0.1
0
to
0.1
1.1
to
1.4
0.3
Marking
PACKAGE DIMENSIONS
in millimeters
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
Document No. PU10037EJ01V0DS (1st edition)
(Previous No. P10376EJ2V0DS00)
Date Published October 2001 CP(K)
Printed in Japan
NEC Corporation 1993
NEC Compound Semiconductor Devices 2001
Caution; Electrostatic Sensitive Device.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
The mark
shows major revised points.
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PDF描述 |
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| 2SC4955-T83 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
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| 2SC4957-T2T83 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4958-T1T82 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC4957-A | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans GP BJT NPN 6V 0.03A 4-Pin Mini-Mold |
| 2SC4957-T1 | 制造商:NEC Electronics Corporation 功能描述: |
| 2SC4957-T1-A | 功能描述:RF TRANSISTOR NPN SOT-143 制造商:cel 系列:- 包裝:帶卷（TR） 零件狀態(tài):有效 晶體管類型:NPN 電壓 - 集射極擊穿（最大值）:6V 頻率 - 躍遷:12GHz 噪聲系數(shù)（dB，不同 f 時(shí)的典型值）:1.5dB @ 2GHz 增益:11dB 功率 - 最大值:180mW 不同?Ic，Vce?時(shí)的 DC 電流增益（hFE）（最小值）:75 @ 10mA，3V 電流 - 集電極（Ic）（最大值）:30mA 安裝類型:表面貼裝 封裝/外殼:TO-253-4，TO-253AA 供應(yīng)商器件封裝:SOT-143 標(biāo)準(zhǔn)包裝:3,000 |
| 2SC4959-T1 | 制造商:NEC Electronics Corporation 功能描述: |
| 2SC4960 | 功能描述:TRANS NPN 800VCEO 1A TOP-3F RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
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