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參數(shù)資料
| 型號： | 2SC5100O |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 8 A, 120 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | FM100, TO-3PF, 3 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 27K |
| 代理商： | 2SC5100O |
127
2SC5100
I C– V CE Characteristics (Typical)
h FE– I C Characteristics (Typical)
h FE– I C Temperature Characteristics (Typical)
θj-a–t Characteristics
I C– V BE Temperature Characteristics (Typical)
V CE(sat) – I B Characteristics (Typical)
Pc – T a Derating
Safe Operating Area (Single Pulse)
f T– I E Characteristics (Typical)
0
3
2
1
0
0.2
0.4
0.6
0.8
1.0
Base Current I B(A)
Collector-Emitter
Saturation
Voltage
V
CE(sat)
(V)
I C=8A
2A
4A
0
8
6
2
4
0
1.5
1.0
0.5
Base-Emittor Voltage V BE(V)
Collector
Current
I
C
(A)
(V CE=4V)
125C
(Case
Temp)
25C
(Case
Temp)
–30C
(Case
Temp)
0.2
1
4
0.5
1
1 0
100
1000
2000
Time t(ms)
Transient
Thermal
Resistance
θ
j-a
(C/W)
80
60
40
20
3.5
0
05 0
25
75
125
100
150
Ambient Temperature Ta(C)
Maximum
Power
Dissipation
P
C
(W)
With
Infinite
heatsink
Without Heatsink
DC
Without Heatsink
Natural Cooling
100ms
10ms
10
5
5 0
100
150
0.1
1
0.5
10
20
5
Collector-Emitter Voltage V CE(V)
Collector
Current
I
C
(A)
0.02
0.1
0.5
1
5
8
20
50
100
200
Collector Current I C(A)
DC
Current
Gain
h
FE
(V CE=4V)
Typ
0
2
4
6
8
2
13
4
Collector-Emitter Voltage V CE(V)
Collector
Current
I
C
(A)
100mA
150mA
200mA
350mA
75mA
50mA
20mA
I B=10mA
(V CE=4V)
0.02
0.5
5
8
1
20
50
200
100
0.1
Collector Current I C(A)
DC
Current
Gain
h
FE
125C
25C
–30C
–0.02
–0.1
–1
–8
0
10
20
40
30
Cut-off
Frequency
f
T
(MH
Z
)
(V CE=12V)
Emitter Current I E(A)
Typ
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1908)
Application : Audio and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Ratings
160
120
6
8
3
75(Tc=25°C)
150
–55 to +150
Unit
V
A
W
°C
sAbsolute maximum ratings
sElectrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
Ratings
10max
120min
50min
0.5max
20typ
200typ
Unit
A
V
MHz
pF
Conditions
VCB=160V
VEB=6V
IC=50mA
VCE=4V, IC=3A
IC=3A, IB=0.3A
VCE=12V, IE=–0.5A
VCB=10V, f=1MHz
(Ta=25°C)
4.4
1.5
BE
C
5.45±0.1
3.3±0.2
1.6
3.3
1.75
0.8
±0.2
2.15
1.05
+0.2
-0.1
5.45±0.1
23.0
±0.3
16.2
9.5
±0.2
5.5
15.6±0.2
5.5±0.2
3.45
3.35
0.65
+0.2
-0.1
±0.2
3.0
0.8
a
b
External Dimensions FM100(TO3PF)
Weight : Approx 6.5g
a. Part No.
b. Lot No.
sTypical Switching Characteristics (Common Emitter)
VCC
(V)
40
RL
(
)
10
IC
(A)
4
VBB2
(V)
–5
IB2
(A)
–0.4
ton
(
s)
0.13typ
tstg
(
s)
3.50typ
tf
(
s)
0.32typ
IB1
(A)
0.4
VBB1
(V)
10
hFE Rank O(50to100), P(70to140), Y(90to180)
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