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參數資料
型號: 2SC5198-O
元件分類: 功率晶體管
英文描述: 10 A, 140 V, NPN, Si, POWER TRANSISTOR
封裝: ROHS COMPLIANT, 2-16C1A, 3 PIN
文件頁數: 1/4頁
文件大小: 148K
代理商: 2SC5198-O
2SC5198
2010-11-02
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5198
Power Amplifier Applications
High breakdown voltage: VCEO = 140 V (min)
Complementary to 2SA1941
Suitable for use in 70-W high fidelity audio amplifier’s output stage
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
140
V
Collector-emitter voltage
VCEO
140
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
10
A
Base current
IB
1
A
Collector power dissipation
(Tc = 25°C)
PC
100
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-16C1A
Weight: 4.7 g (typ.)
相關PDF資料
PDF描述
2SC519A 7 A, 110 V, NPN, Si, POWER TRANSISTOR, TO-3
2SC5200LR 15 A, 230 V, NPN, Si, POWER TRANSISTOR
2SC5200L 15 A, 230 V, NPN, Si, POWER TRANSISTOR
2SC5200O 15 A, 230 V, NPN, Si, POWER TRANSISTOR
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相關代理商/技術參數
參數描述
2SC5198-O(Q) 功能描述:兩極晶體管 - BJT NPN VCEO 140V Ic 10A PC 100W RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC5198-O(Q,T) 功能描述:兩極晶體管 - BJT NPN VCEO 140V Ic 10A PC 100W RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC5198-O(S1,X,S) 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR
2SC5198OQ 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Power Amplifier Applications
2SC5198-OQ 制造商:Toshiba America Electronic Components 功能描述:POWER TRANSISTOR 2SC5198-O(Q)
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