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參數資料
| 型號： | 2SC5387 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10 A, 600 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | 2-16E3A, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 357K |
| 代理商： | 2SC5387 |
2SC5387
2004-07-07
1
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5387
HORIZONTAL DEFLECTION OUTPUT FOR HIGH
RESOLUTION
DISPLAY, COLOR TV
HIGH SPEED SWITCHING APPLICATIONS
High Voltage
: VCBO = 1500 V
Low Saturation Voltage
: VCE (sat) = 3 V (Max.)
High Speed
: tf = 0.15 s (Typ.)
Collector Metal (Fin) is Fully Covered with Mold Resin.
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
CollectorBase Voltage
VCBO
1500
V
CollectorEmitter Voltage
VCEO
600
V
EmitterBase Voltage
VEBO
5
V
DC
IC
10
Collector Current
Pulse
ICP
20
A
Base Current
IB
5
A
Collector Power Dissipation
PC
50
W
Junction Temperature
Tj
150
°C
Storage Temperature Range
Tstg
55~150
°C
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
TYP.
MAX
UNIT
Collector Cutoff Current
ICBO
VCB = 1500 V, IE = 0
―
1
mA
Emitter Cutoff Current
IEBO
VEB = 5 V, IC = 0
―
10
A
EmitterBase Breakdown Voltage
V (BR) CEO
IC = 10 mA, IB = 0
600
―
V
hFE (1)
VCE = 5 V, IC = 1 A
15
―
35
DC Current Gain
hFE (2)
VCE = 5 V, IC = 8 A
4.3
―
7.8
―
CollectorEmitter Saturation Voltage
VCE (sat)
IC = 8 A, IB = 2 A
―
3
V
BaseEmitter Saturation Voltage
VBE (sat)
IC = 8 A, IB = 2 A
―
1.5
V
Transition Frequency
fT
VCE = 10 V, IC = 0.1 A
―
1.7
―
MHz
Collector Output Capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
130
―
pF
Storage Time
tstg
―
2.5
3.5
Switching Time
Fall Time
tf
ICP = 6 A, IB1 (end) = 1.2 A
fH = 64 kHz
―
0.15
0.3
s
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-16E3A
Weight: 5.5 g (typ.)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC5388 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:High-Voltage Switching Applications |
| 2SC5388-LF | 制造商:SUNSPIRIT 制造商全稱:SUNSPIRIT 功能描述:High-Voltage Switching Applications NPN Triple Diffused Planar Silicon Transistor |
| 2SC538A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 50MA I(C) | TO-18 |
| 2SC539 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 50MA I(C) | TO-18 |
| 2SC5390 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon NPN Epitaxial High Frequency Amplifier |
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