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參數(shù)資料
| 型號(hào)： | 2SC5409-T1FB |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SO-6 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 39K |
| 代理商： | 2SC5409-T1FB |
1997
PRELIMINARY DATA SHEET
FEATURE
High fT
16 GHz TYP.
High gain
|S21e|2 = 14 dB TYP.
@f = 2 GHz, VCE = 2 V, IC = 20 mA
NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 3 mA
6-pin Small Mini Mold Package
ORDERING INFORMATION
PART NUMBER
QUANTITY
PACKING STYLE
2SC5409-T1
3 kpcs/reel
8-mm wide emboss taping, 6-pin
(collector) feed hole direction
Remark
To order evaluation samples, consult your NEC sales person-
nel (supported in 50-pcs units).
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
VCBO
5V
Collector to Emitter Voltage
VCEO
3V
Emitter to Base Voltage
VEBO
2V
Collector Current
IC
30
mA
Total Power Dissipation
PT
90
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
–65 to +150
°C
SILICON TRANSISTOR
2SC5409
NPN EPITAXIAL SILICON TRANSISTOR
FOR MICROWAVE HIGH-GAIN AMPLIFICATION
Document No. P12096EJ1V0DS00 (1st edition)
Date Published April 1997 N
Printed in Japan
2.1±0.1
1.25±0.1
2.0±0.2
0.9±0.1
0.7
1.3
B
0
to
0.1
EE
C
EE
0.65
+0.1
–0
0.2
+0.1
–0
0.15
T97
PACKAGE DIMENSIONS (in mm)
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
Because this product uses high-frequency process, avoid excessive input of static electricity, etc.
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| 2SC5414AE | 制造商:ON Semiconductor 功能描述:BIP NPN 100MA 12V FT=6.7G - Tape and Reel |
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| 2SC5415AE-TD-E | 功能描述:兩極晶體管 - BJT ULAHIGH-FREQUENCY TRANSISTOR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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