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參數資料
| 型號： | 2SC5431 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN EPITAXIAL SILICON TRANSISTOR FOR UHF TUNER OSC/MIX |
| 中文描述： | npn型外延硅晶體管的超高頻調諧振蕩器/混合 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 55K |
| 代理商： | 2SC5431 |
1998
PRELIMINARY DATA SHEET
FEATURE
Ultra super mini-mold thin flat package
(1.4 mm
×
0.8 mm
×
0.59 mm: TYP.)
Contains same chip as 2SC5004
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
V
CBO
20
V
Collector to Emitter Voltage
V
CEO
12
V
Emitter to Base Voltage
V
EBO
3
V
Collector Current
I
C
60
mA
Total Power Dissipation
P
T
100
mW
Junction Temperature
T
j
125
°
C
Storage Temperature
T
stg
–65 to +125
°
C
SILICON TRANSISTOR
2SC5431
NPN EPITAXIAL SILICON TRANSISTOR
FOR UHF TUNER OSC/MIX
Document No. P13075EJ1V0DS00 (1st edition)
Date Published February 1998 N CP(K)
Printed in Japan
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
= 15 V, I
E
= 0
100
nA
Emitter Cut-off Current
I
EBO
V
EB
= 1 V, I
C
= 0
100
nA
Collector to Emitter Saturation
Voltage
V
CE
(sat)
h
FE
= 10, I
C
= 5 mA
0.5
V
DC Current Gain
h
FE
V
CE
= 5 V, I
C
= 5 mA
Note 1
60
120
Gain Bandwidth Product
f
T
V
CE
= 5 V, I
C
= 5 mA, f = 1 GHz
3.0
4.3
GHz
Reverse Transfer Capacitance
C
re
V
CB
= 5 V, I
E
= 0, f = 1 MHz
Note 2
0.6
1.2
pF
Insertion Power Gain
|S
21e
|
2
V
CE
= 5 V, I
C
= 5 mA, f = 1 GHz
5.0
dB
Notes 1.
Pulse measurement P
W
≤
350
μ
s, duty cycle
≤
2 %
2.
Collector to base capacitance measured by capacitance meter (automatic balance bridge method) when
emitter pin is connected to the guard pin.
Because this product uses high-frequency process, avoid excessive input of static electricity, etc.
PACKAGE DIMENSIONS (in mm)
1.4 ± 0.05
0.8 ± 0.1
1
0
(
0
0
+
0
–
+
0
–
+
0
–
1
3
2
T
PIN CONNECTIONS
1: Emitter
2: Base
3: Collector
The information in this document is subject to change without notice.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC5431-T1-A(FB) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5435-T1-A(EB) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SC5439(F) | 功能描述:兩極晶體管 - BJT NPN 450V 8A Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5443 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTOR TO-3 1500V 20A 3.5W |
| 2SC5445 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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