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參數資料
型號: 2SC5432
廠商: NEC Corp.
英文描述: NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
中文描述: npn型外延硅晶體管高頻低噪聲放大的高
文件頁數: 1/8頁
文件大小: 59K
代理商: 2SC5432
1998
PRELIMINARY DATA SHEET
FEATURE
Ultra super mini-mold thin flat package
(1.4 mm
×
0.8 mm
×
0.59 mm: TYP.)
Contains same chip as 2SC5006
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
V
CBO
20
V
Collector to Emitter Voltage
V
CEO
12
V
Emitter to Base Voltage
V
EBO
3
V
Collector Current
I
C
100
mA
Total Power Dissipation
P
T
125
mW
Junction Temperature
T
j
150
°
C
Storage Temperature
T
stg
–65 to +150
°
C
SILICON TRANSISTOR
2SC5432
NPN EPITAXIAL SILICON TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
Document No. P13076EJ1V0DS00 (1st edition)
Date Published February 1998 N CP(K)
Printed in Japan
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
= 10 V, I
E
= 0
1000
nA
Emitter Cut-off Current
I
EBO
V
EB
= 1 V, I
C
= 0
1000
nA
DC Current Gain
h
FE
V
CE
= 3 V, I
C
= 7 mA
Note 1
80
145
Gain Bandwidth Product
f
T
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
3.0
4.5
GHz
Reverse Transfer Capacitance
C
re
V
CB
= 3 V, I
E
= 0, f = 1 MHz
Note 2
0.7
1.5
pF
Insertion Power Gain
|S
21e
|
2
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
7.0
10.0
dB
Noise Figure
NF
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
1.4
2.5
dB
Notes 1.
Pulse measurement P
W
350
μ
s, duty cycle
2 %
2.
Collector to base capacitance measured by capacitance meter (automatic balance bridge method) when
emitter pin is connected to the guard pin.
Because this product uses high-frequency process, avoid excessive input of static electricity, etc.
PACKAGE DIMENSIONS (in mm)
1.4 ± 0.05
0.8 ± 0.1
1
0
(
0
0
+
0
+
0
+
0
1
3
2
T
PIN CONNECTIONS
1: Emitter
2: Base
3: Collector
The information in this document is subject to change without notice.
相關PDF資料
PDF描述
2SC5433 NPN Epitaxial Silicon Transistor High Frequency Low Noise Amplifier(NPN 外延硅晶體管)
2SC5434 High-Frequecy Low-Noise Amplifier NPN Transistor(高頻低噪聲放大器NPN晶體管)
2SC5435 High-Frequecy Low-Noise Amplifier NPN Transistor(高頻低噪聲放大器NPN晶體管)
2SC5436 High-Frequecy Low-Noise Amplifier NPN Transistor(高頻低噪聲放大器NPN晶體管)
2SC5437 High-Frequecy Low-Noise Amplifier NPN Transistor(高頻低噪聲放大器NPN晶體管)
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