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參數資料
型號: 2SC5548(2-7B1A)
元件分類: 小信號晶體管
英文描述: 2000 mA, 370 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: LEAD FREE, 2-7B1A, 3 PIN
文件頁數: 1/5頁
文件大小: 217K
代理商: 2SC5548(2-7B1A)
2SC5548
2006-11-10
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5548
High Voltage Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
High speed switching: tr = 0.5 s (max), tf = 0.3 s (max) (IC = 0.8 A)
High collector breakdown voltage: VCEO = 370 V
High DC current gain: hFE = 60 (min) (IC = 0.2 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
600
V
Collector-emitter voltage
VCEO
370
V
Emitter-base voltage
VEBO
7
V
DC
IC
2
Collector current
Pulse
ICP
4
A
Base current
IB
0.5
A
Ta = 25°C
1.0
Collector power
dissipation
Tc = 25°C
PC
15
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
相關PDF資料
PDF描述
2SC5550 1 A, 400 V, NPN, Si, POWER TRANSISTOR
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2SC5566 4 A, 50 V, NPN, Si, POWER TRANSISTOR
2SC5593 L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5650 L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
相關代理商/技術參數
參數描述
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