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參數資料
| 型號： | 2SC5576 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Medium Power Transistor(中等功率晶體管) |
| 中文描述： | 中等功率晶體管（中等功率晶體管） |
| 文件頁數： | 1/1頁 |
| 文件大?。?/td> | 49K |
| 代理商： | 2SC5576 |
2SC5576
Transisitors
Medium Power Transistor
(Motor or Relay drive) (60
±
10V, 4A)
2SC5576
!
Features
1) Built-in zener diode between collector and base.
2) Strong protection against reverse power surges due to
"L" loads.
3) Built-in resistor between base and emitter.
4) Built-in damper diode.
!
Circuit diagram
R
2
R
1
C
B
E
R
1
4.5k
R
2
300
B : Base
E : Emitter
!
Absolute maximum ratings
(Ta=25
°
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
60±10
60±10
6
4
6
2
150
-55~+150
Unit
V
V
V
A(DC)
A(Pulse)
W
*
30
W(Tc=25C)
C
C
*
Single pulse, Pw=100ms
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
!
Packaging specifications and h
FE
Type
Package
h
FE
Code
2SC5576
TO-220FN
2k
～
20k
-
500
Basic ordering unit
(pieces)
!
Electrical characteristics
(Ta=25
°
C)
Parameter
Symbol
BV
CBO
BV
CEO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
C
ob
t
on
t
stg
t
f
*
2 Transition frequency of the device.
Min.
50
50
-
-
-
2000
-
-
-
-
-
Typ.
60
60
-
-
1
-
80
30
0.4
1.5
0.4
Max.
70
70
10
3
1.5
10000
-
-
-
-
-
Unit
V
V
μ
A
mA
V
Conditions
*
1
*
1
*
2
MHz
pF
μ
s
μ
s
μ
s
I
C
=50
μ
A
I
C
=5mA
V
CB
=40V
V
EB
=5V
I
C
/I
B
=1.5A/6mA
V
CE
/I
C
=5V/1.5A
V
CE
=5V , I
E
=-0.2A , f=30MHz
V
CB
=10V , I
E
=0A , f=1MHz
I
C
=1.5A , R
L
=14
I
B1
=-I
B2
=6mA
V
CC
20V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
*
1 Measured using pulse current.
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