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參數(shù)資料
| 型號(hào)： | 2SC5580 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Silicon NPN epitaxial planer type(For high-frequency oscillation / switching) |
| 中文描述： | Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | SC-70, 3 PIN |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 43K |
| 代理商： | 2SC5580 |
Transistors
2SC5580
Silicon NPN epitaxial planer type
1
For high-frequency oscillation / switching
I
Features
High transition frequency f
T
S-mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
I
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
15
V
Collector to emitter voltage
V
CEO
V
EBO
I
C
8
V
Emitter to base voltage
3
V
Collector current
50
mA
Collector power dissipation
P
C
T
j
T
stg
150
mW
Junction temperature
150
°
C
°
C
Storage temperature
55 to
+
150
Marking Symbol: 3R
Unit: mm
2
±
1.3
±0.1
0.3
+0.1
2.0
±0.2
1
±
(
1
3
2
(0.65) (0.65)
0
±
0
±
0
0
+
–
0.15
+0.10
5
°
10
°
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Emitter cutoff current
I
EBO
V
CBO
V
EB
=
2 V, I
C
=
0
I
C
=
100
μ
A, I
E
=
0
V
CE
=
4 V, I
C
=
2 mA
V
CE
=
4 V, I
C
=
100
μ
A/2 mA
I
C
=
20 mA, I
B
=
4 mA
V
CE
=
5 V, I
C
=
15 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0
, f
=
1 MHz
2
μ
A
Collector to base voltage
15
V
Forward current transfer ratio
h
FE
100
350
h
FE
ratio
Collector to emitter saturation voltage
h
FE(RATIO)
V
CE(sat)
0.6
1.5
dB
0.5
V
Transition frequency
f
T
C
ob
0.6
1.1
GHz
Collector output capacitance
1.2
1.6
pF
I
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
S-Mini Type Package
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