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參數資料
| 型號： | 2SC5585 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | EMT3, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 62K |
| 代理商： | 2SC5585 |
2SC5585
Transistors
Low Frequency Transistor (50V, 2A)
2SC5585
The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes.
!
!Features
1) High current.
2) Low VCE(sat).
VCE(sat)
≤ 250mV at IC = 200mA / IB = 10mA
!
!Structure
For switching
For muting
!
!External dimensions
(Units : mm)
0.2
0.5
1.0
±0.1
1.6
±0.2
0.3
0.8
±
0.1
1.6
±
0.2
0.55
±0.1
0.7
±0.1
0.15
±0.05
0.1Min.
(3)
(2)
(1)
0~0.1
0.05
+0.1
0.05
+0.1
0.05
(1) EMITTER
(2) BASE
(3) COLLECTOR
ROHM : EMT3
!
!Absolute maximum ratings
(Ta = 25
°C)
Parameter
Collectot-base voltage
Collector-emitter voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
IC
PC
Tj
Tstg
15
V
mA
mW
°C
12
500
ICP
A
1
150
55~+150
Symbol
Limits
Unit
Single pulse Pw = 1ms
!
!Electrical characteristics
(Ta = 25
°C)
Parameter
Collector-base breakdown voltage
Collectoe-emitter brakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
hFE
VCE(sat)
Cob
Min.
15
12
6
270
90
7.5
100
680
250
VIC = 10
A
IC = 1mA
IE = 10
A
VCB = 15V
VCE = 2V, IC = 10mA
IC/IB = 200mA/10mA
VCB = 10V, IE = 0A, f = 1MHz
V
nA
mV
fT
320
VCE = 2V, IE =
10mA, f = 100MHz
MHz
pF
Typ.
Max.
Unit
Conditions
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相關代理商/技術參數 |
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| 2SC5589(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
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