- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33418 > 2SC5585TL 500 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SC5585TL |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | EMT3, SC-75A, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 68K |
| 代理商： | 2SC5585TL |
2SC5585 / 2SC5663
Transistors
Rev.B
1/2
Low frequency transistor (12V, 0.5A)
2SC5585 / 2SC5663
The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes.
Applications
For switching
For muting
Features
1) High current.
2) Low VCE(sat).
VCE(sat)
≤ 250mV at IC = 200mA / IB = 10mA
External dimensions (Unit : mm)
ROHM : EMT3
EIAJ : SC-75A
JEDEC : SOT-416
2SC5585
Abbreviated symbol : BX
ROHM : VMT3
2SC5663
(1) Base
(2) Emitter
(3) Collector
(1) Emitter
(2) Base
(3) Collector
0.7
0.15
0.1Min.
0.55
0~0.1
0.2
1.6
1.0
0.3
0.8
(2)
0.5
(3)
0.2
(1)
0~0.1
(3)
0.32
0.8
1.2
0.13
0.5
0.22
0.4
1.2
0.8
0.2
0.15Max.
0.2
(2)
(1)
Absolute maximum ratings (Ta=25
°C)
Parameter
Collectot-base voltage
Collector-emitter voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
IC
PC
Tj
Tstg
15
V
mA
mW
°C
12
Emitter-base voltage
VEBO
V
6
500
ICP
A
1
150
55 to +150
Symbol
Limits
Unit
Single pulse Pw = 1ms
Electrical characteristics (Ta=25
°C)
Parameter
Collector-base breakdown voltage
Collectoe-emitter brakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
hFE
VCE(sat)
Cob
Min.
15
12
6
270
90
7.5
100
680
250
VIC = 10
A
IC = 1mA
IE = 10
A
VCB = 15V
VCE = 2V, IC = 10mA
IC = 200mA, IB = 10mA
VCB = 10V, IE = 0A, f = 1MHz
V
nA
Emitter cutoff current
IEBO
100
VCB = 6V
nA
mV
fT
320
VCE = 2V, IE =
10mA, f = 100MHz
MHz
pF
Typ.
Max.
Unit
Conditions
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC5676-T1FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5680 | 10 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 2SC5684 | 0.8 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 2SC5689 | 10 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 2SC5690 | 15 A, 800 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5587(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC5588 | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 800V 15A 3-Pin(3+Tab) TO-3P(HIS) 制造商:Distributed By MCM 功能描述:1700V 15A 75W Bce Toshiba Transistor 2-16E3A |
| 2SC5588(Q,M) | 功能描述:兩極晶體管 - BJT Transistor NPN 1700V 15A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5589(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC558B | 制造商:n/a 功能描述:2SC558B TO92 S7D4A |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。