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參數資料
| 型號： | 2SC5684 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 0.8 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | LEAD FREE, 2-10T1A, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 117K |
| 代理商： | 2SC5684 |
2SC5684
2004-07-26
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5684
Switching Regulator and High-Voltage Switching
Applications
Excellent switching times (IC = 0.3 A)
: tr = 0.7 s (max), tf = 0.5 s (max)
High collector breakdown voltage: VCEO = 800 V
High-speed DC-DC converter applications
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
900
V
Collector-emitter voltage
VCEO
800
V
Emitter-base voltage
VEBO
7
V
DC
IC
0.8
Collector current
Pulse
ICP
1.5
A
Base current
IB
0.4
A
Collector power dissipation
PC
1.8
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 720 V, IE = 0
―
100
A
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
―
1
mA
Collector-base breakdown voltage
V (BR) CBO
IC = 1 mA, IE = 0
900
―
V
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
800
―
V
hFE (1)
VCE = 5 V, IC = 1 mA
10
―
DC current gain
hFE (2)
VCE = 5 V, IC = 0.08 A
15
―
60
Collector-emitter saturation voltage
VCE (sat)
IC = 0.3 A, IB = 0.06 A
―
1.0
V
Base-emitter saturation voltage
VBE (sat)
IC = 0.3 A, IB = 0.06 A
―
1.2
V
Rise time
tr
―
0.7
Storage time
tstg
―
4.5
Switching time
Fall time
tf
IB1 = 0.06 A, IB2 = 0.12 A
Duty cycle ≤ 1%
―
0.5
s
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-10T1A
Weight: 1.5 g (typ.)
I B1
20 s
I B2
VCC ≈ 360 V
Output
1.
2k
IB2
IB1
Input
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