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參數資料
| 型號： | 2SC5694 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 7 A, 50 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-126ML, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 38K |
| 代理商： | 2SC5694 |
2SA2037 / 2SC5694
No.6587-1/5
Applications
Relay drivers, lamp drivers, motor drivers and
printer drivers.
Features
Adoption of MBIT process.
Large current capacity.
Low collector-to-emitter saturation voltage.
High-speed switching.
High allowable power dissipation.
Specifications
( ):2SA2037
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(
50)60
V
Collector-to-Emitter Voltage
VCEO
(
)50
V
Emitter-to-Base Voltage
VEBO
(
)6
V
Collector Current
IC
(
)7
A
Collector Current (Pulse)
ICP
(
)10
A
Base Current
IB
(
)1.2
A
Collector Dissipation
PC
1.5
W
Tc=25
°C10
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
55 to +150
°C
Ordering number : ENN6587A
2SA2037 / 2SC5694
DC / DC Converter Applications
Package Dimensions
unit : mm
2042B
[2SA2037 / 2SC5694]
71003 TS IM TA-4142 / 82200 TS IM TA-2916
PNP / NPN Epitaxial Planar Silicon Transistors
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
4.0
1.0
8.0
1.6
0.8
0.75
1.5
7.5
3.0
1.4
11.0
15.5
3.3
3.0
0.7
2.4
4.8
1.7
1
2
3
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
相關PDF資料 |
PDF描述 |
|---|---|
| 2SA2037 | 7 A, 50 V, PNP, Si, POWER TRANSISTOR |
| 2SA2037 | 7 A, 50 V, PNP, Si, POWER TRANSISTOR |
| 2SC5696 | 12 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 2SC5699 | 8 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 2SC5703 | 4000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC5695 (Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC5700 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5703(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC5706-E | 功能描述:兩極晶體管 - BJT BIP NPN 5A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5706-H | 功能描述:兩極晶體管 - BJT BIP NPN 5A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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