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參數資料
| 型號： | 2SC5609 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon PNP epitaxial planer type |
| 中文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SSSMINI3-F1, 3 PIN |
| 文件頁數： | 1/1頁 |
| 文件大小： | 45K |
| 代理商： | 2SC5609 |
Transistors
2SC5609
Silicon PNP epitaxial planer type
1
For general amplification
Complementary to 2SA2021
I
Features
High foward current transfer ratio h
FE
SSS-mini type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing
I
Absolute Maximum Ratings
T
a
=
25
°
C
Unit: mm
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
V
CEO
60
V
Collector to emitter voltage
50
V
Emitter to base voltage
V
EBO
I
CP
I
C
7
V
Peak collector current
200
mA
Collector current
100
mA
Collector power dissipation
P
C
T
j
T
stg
100
mW
Junction temperature
125
°
C
°
C
Storage temperature
55 to
+
125
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
B
=
0
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CE
=
10 V, I
C
=
2 mA
V
CE
=
2 V, I
C
=
100 mA
I
C
=
100 mA, I
B
=
10 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
V
CB
= 10 V, I
E
=
2 mA, f = 200 MHz
0.1
μ
A
μ
A
I
CEO
V
CBO
V
CEO
100
Collector to base voltage
60
V
Collector to emitter voltage
50
V
Emitter to base voltage
V
EBO
h
FE1
h
FE2
7
V
Forward current transfer ratio
180
390
90
Collector to emitter saturation voltage
V
CE(sat)
C
ob
f
T
0.1
0.3
V
Collector output capacitance
3.5
pF
Transition frequency
80
MHz
I
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Marking Symbol: 3F
1: Base
2: Emitter
3: Collector
SSS Mini Type Package (3-pin)
1
±
0
±
0
5
0
0
±
0
0.33
(0.40)
(0.40)
0.80
±0.05
1.20
±0.05
1
2
3
5
+0.05
0.10
+0.05
0.23
+0.05
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