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參數(shù)資料
| 型號(hào)： | 2SC5646 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | UHF to S Band Low-Noise Amplifier andOSC Applications |
| 中文描述： | 超高頻的S波段低噪聲放大器andOSC應(yīng)用 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 31K |
| 代理商： | 2SC5646 |
2SC5646
No.6606-1/6
UHF to S Band Low-Noise
Amplifier
and OSC Applications
Features
Low-noise use : NF=1.5dB typ (f=2GHz).
High cut-off frequency: fT=10GHz typ (VCE=1V).
: fT=12.5GHz typ (VCE=3V).
Low operating voltage.
High gain :
S21e
2
=9.5dB typ (f=2GHz).
Ultraminiature and thin flat leadless package
(1.4mm
0.8mm
0.6mm).
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
Ratings
Unit
V
V
V
mA
mW
°
C
°
C
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
9
4
2
30
100
150
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
ICBO
IEBO
hFE
fT1
fT2
Cob
Cre
S21e
S21e
NF
VCB=5V, IE=0
VEB=1V, IC=0
VCE=1V, IC=5mA
VCE=1V, IC=5mA
VCE=3V, IC=15mA
VCB=1V, f=1MHz
VCB=1V, f=1MHz
VCE=1V, IC=5mA, f=2GHz
VCE=3V, IC=15mA, f=2GHz
VCE=1V, IC=3mA, f=2GHz
1.0
10
160
μ
A
μ
A
100
Gain-Bandwidth Product
8
10
GHz
GHz
pF
pF
dB
dB
dB
12.5
0.55
0.4
9.5
10.5
1.5
Output Capacitance
Reverse Transfer Capacitance
0.7
Forward Transfer Gain
2
1
8
2
2
Noise Figure
Marking : NF
2.3
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6606
2SC5646
Package Dimensions
unit : mm
2159
[2SC5646]
72100 TS IM TA-2972
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
1 : Base
2 : Emitter
3 : Collector
SANYO : SSFP
0
0.25
0.2
1.4
0.45
1
3
2
0
1
0
0
0.1
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