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參數資料
| 型號： | 2SC5651 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | CERAMIC, M23, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 19K |
| 代理商： | 2SC5651 |
NE688M23
NPN SILICON TRANSISTOR
NEW MINIATURE M23 PACKAGE:
– World's smallest transistor package footprint —
leads are completely underneath package body
– Low profile/0.55 mm package height
– Ceramic substrate for better RF performance
HIGH GAIN BANDWIDTH PRODUCT:
fT = 9.5 GHz
LOW NOISE FIGURE:
NF = 1.7 dB at 2 GHz
HIGH COLLECTOR CURRENT:
IC MAX = 100 mA
FEATURES
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M03
PRELIMINARY DATA SHEET
PART NUMBER
NE688M23
EIAJ1 REGISTERED NUMBER
2SC5651
PACKAGE OUTLINE
M23
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
fT
Gain Bandwidth at VCE = 1 V, IC = 3 mA, f = 2 GHz
GHz
4
5
NF
Noise Figure at VCE = 1 V, IC = 3 mA, f = 2 GHz
dB
1.9
2.5
|S21E|2
Insertion Power Gain at VCE = 1 V, IC = 3 mA, f = 2 GHz
dB
3
4
hFE2
Forward Current Gain at VCE = 1 V, IC = 3 mA
80
145
ICBO
Collector Cutoff Current at VCB = 5 V, IE = 0
A
0.1
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
A
0.1
CRE3
Feedback Capacitance at VCB = 1 V, IE = 0, f = 1 MHz
pF
0.7
0.8
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
California Eastern Laboratories
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
≤ 350 s, duty cycle ≤ 2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
DESCRIPTION
The NE688M23 transistor is designed for low cost amplifier
and oscillator applications. Low noise figure, high gain and high
current capability equate to wide dynamic range and excellent
linearity. NEC's new low profile/ceramic substrate style "M23"
package is ideal for today's portable wireless applications. The
NE688 is also available in chip and six different low cost plastic
surface mount package styles.
0.15
0.2
0.15
2
1
0.25
0.4
0.5
1.0
0.55
0.6
BOTTOM VIEW
3
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