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參數資料
| 型號： | 2SC5658M3T5G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN Silicon General Purpose Amplifier Transistor(通用型硅NPN放大器晶體管) |
| 中文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE, CASE 631AA-01, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 44K |
| 代理商： | 2SC5658M3T5G |
Semiconductor Components Industries, LLC, 2004
February, 2004 Rev. 0
1
Publication Order Number:
2SC5658M3/D
2SC5658M3T5G
NPN Silicon General
Purpose Amplifier Transistor
This NPN transistor is designed for general purpose amplifier
applications. This device is housed in the SOT-723 package which is
designed for low power surface mount applications, where board
space is at a premium.
Reduces Board Space
High h
FE
, 210460 (typical)
Low V
CE(sat)
, < 0.5 V
ESD Performance: Human Body Model;
Machine Model;
Available in 8 mm, 7-inch/3000 Unit Tape and Reel
This is a PbFree Device
2000 V,
200 V
MAXIMUM RATINGS
(T
A
= 25
°
C)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V
(BR)CBO
50
Vdc
Collector-Emitter Voltage
V
(BR)CEO
50
Vdc
Emitter-Base Voltage
V
(BR)EBO
5.0
Vdc
Collector Current Continuous
I
C
100
mAdc
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation (Note 1)
P
D
260
mW
Junction Temperature
T
J
150
°
C
Storage Temperature Range
T
stg
55 ~ +150
°
C
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
http://onsemi.com
Device
Package
Shipping
ORDERING INFORMATION
2SC5658M3T5G
SOT723
3000/Tape & Reel
SOT723
CASE 631AA
MARKING
DIAGRAM
1
2
3
XX M
XX= Specific Device Code
M = Date Code
COLLECTOR
3
1
BASE
2
EMITTER
NPN GENERAL
PURPOSE AMPLIFIER
TRANSISTORS
SURFACE MOUNT
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC5658RM3T5G | 功能描述:兩極晶體管 - BJT SS GENERAL PURPOSE NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5658T2L | 制造商:ROHM Semiconductor 功能描述: 制造商:ROHM Semiconductor 功能描述:150 MA, 50 V, NPN, SI, SMALL SIGNAL TRANSISTOR, VMT3, 3 PIN |
| 2SC5658T2LQ | 功能描述:兩極晶體管 - BJT NPN 50V 0.15A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5658T2LR | 功能描述:兩極晶體管 - BJT NPN 50V 150MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5658T2LS | 功能描述:兩極晶體管 - BJT NPN 50V 150MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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