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參數資料
| 型號： | 2SC5692 |
| 廠商： | Toshiba Corporation |
| 元件分類： | DC/DC變換器 |
| 英文描述： | High-Speed Switching Applications DC-DC Converter Applications Strobe Applications |
| 中文描述： | 高速開關應用DC - DC轉換器應用頻閃應用 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 167K |
| 代理商： | 2SC5692 |
2SC5692
2001-12-12
1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5692
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
High DC current gain: h
FE
= 400 to 1000 (I
C
= 0.3 A)
Low collector-emitter saturation voltage: V
CE (sat)
= 0.14 V (max)
High-speed switching: t
f
= 120 ns (typ.)
Maximum Ratings
(Ta
=
25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V
CBO
100
V
Collector-emitter voltage
V
CEX
80
V
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
7
V
DC
I
C
2.5
Collector current
Pulse
I
CP
4.0
A
Base current
I
B
250
mA
DC
625
Collector power
dissipation
t
=
10 s
P
C
(Note)
1000
mW
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55 to 150
°C
Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm
2
)
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
=
100 V, I
E
=
0
100
nA
Emitter cut-off current
I
EBO
V
EB
=
7 V, I
C
=
0
100
nA
Collector-emitter breakdown voltage
V
(BR) CEO
I
C
=
10 mA, I
B
=
0
50
V
h
FE
(1)
V
CE
=
2 V, I
C
=
0.3 A
400
1000
DC current gain
h
FE
(2)
V
CE
=
2 V, I
C
=
1 A
200
Collector-emitter saturation voltage
V
CE (sat)
I
C
=
1 A, I
B
=
20 mA
0.14
V
Base-emitter saturation voltage
V
BE (sat)
I
C
=
1 A, I
B
=
20 mA
1.10
V
Collector output capacitance
C
ob
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
13
pF
Rise time
t
r
40
Storage time
t
stg
500
Switching time
Fall time
t
f
See Figure 1 circuit diagram.
V
CC
～
30 V, R
L
=
30
I
B1
=
I
B2
=
33.3 mA
120
ns
Industrial Applications
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-3S1A
Weight: 0.01 g (typ.)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC5692(TE85L,F) | 功能描述:兩極晶體管 - BJT SM Sig PNP Trans VCEO -50V IC -150mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5695 (Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC5700 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5703(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC5706-E | 功能描述:兩極晶體管 - BJT BIP NPN 5A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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