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參數資料
| 型號： | 2SC5661 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | High-Frequency Amplifier Transistor (18V, 50mA, 1.5GHz) |
| 中文描述： | 高頻晶體管放大器（18V的，50mA的，1.5GHz的） |
| 文件頁數： | 1/2頁 |
| 文件大小： | 71K |
| 代理商： | 2SC5661 |
2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K
Transistors
High-Frequency Amplifier Transistor
(18V, 50mA, 1.5GHz)
2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K
1/1
!
Features
1) High transition frequency. (Typ. f
T
= 1.5GHz)
2) Small rbb’
Cc
and high gain. (Typ. 6ps)
3) Small NF.
!
Absolute maximum ratings
(Ta=25
°
C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
30
18
3
50
0.15
0.2
150
55~
+
150
Unit
V
V
V
mA
2SC4082, 2SC3837K
2SC5661, 2SC4725
W
°
C
°
C
Collector power
Junction temperature
Storage temperature
!
Packaging specifications and h
FE
Type
2SC5661
VMT3
NP
AC
T2L
Code
Basic ordering unit
(pieces)
2SC4725
EMT3
NP
AC
TL
3000
8000
2SC4082
UMT3
NP
1C
T106
3000
2SC3837K
SMT3
NP
AC
T146
3000
Denotes h
FE
Package
h
FE
Marking
!
External dimensions
(Units : mm)
(2) Base
(3) Collector
(1) Emitter
(3) Collector
(1) Emitter
(3) Collector
(1) Emitter
(2) Base
Each lead has same dimensions
Each lead has same dimensions
0
0
0.1Min.
0
0
0
1.6
1
1
0
0.8
(2)
0
(3)
0
(1)
2
1.25
2.1
0
0
0
0.1to0.4
(
0
0
0
0
(
1
(
0
0
0
0
0.3to0.6
1
(
(
2.8
1.6
0
(
2
1
0
2SC4725
2SC4082
2SC3837K
2SC5661
ROHM : VMT3
ROHM : EMT3
EIAJ : SC-75A
ROHM : UMT3
ROHM : SMT3
(1) Base
(2) Emitter
(3) Collector
0
(3)
0
0
1
0
0
0
1.2
0.8
0.2
0.15Max.
0.2
(2)
(1)
!
Electrical characteristics
(Ta=25
°
C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
Min.
30
18
3
Typ.
Max.
0.5
0.5
0.5
Unit
V
V
V
μ
A
μ
A
V
Conditions
h
FE
f
T
Cob
rbb'
·Cc
NF
56
600
1500
0.9
6
4.5
180
1.5
13
MHz
pF
ps
dB
I
C
=
10
μ
A
I
C
=
1mA
I
E
=
10
μ
A
V
CB
=
10V
V
EB
=
2V
I
C
/I
B
=
20mA/4mA
V
CE
/I
C
=
10V/10mA
V
CB
=
10V , I
C
=
10mA , f
=
200MHz
V
CB
=
10V , I
E
=
0A , f
=
1MHz
V
CB
=
10V , I
C
=
10mA , f
=
31.8MHz
V
CE
=
12V , I
C
=
2mA , f
=
200MHz , Rg
=
50
DC current transfer ratio
Transition frequency
Output capacitance
Collector-base time constant
Noise factor
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC3838 | High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz) |
| 2SC3838K | High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz) |
| 2SC4083 | High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz) |
| 2SC4726 | High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz) |
| 2SC5662 | High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC5661T2LP | 功能描述:兩極晶體管 - BJT NPN 20V 50MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5661T2L-P | 制造商:ROHM Semiconductor 功能描述: |
| 2SC5662T2LN | 功能描述:兩極晶體管 - BJT VMT3 NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5662T2LP | 功能描述:兩極晶體管 - BJT NPN 11V 50MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5663T2L | 功能描述:兩極晶體管 - BJT NPN 12V 0.5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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