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參數資料
| 型號： | 2SC5722 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 20 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-3PBL, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 31K |
| 代理商： | 2SC5722 |
2SC5722
No.7402-1/4
Features
High speed.
High breakdown voltage(VCBO=1500V).
High reliability(Adoption of HVP process).
Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
1500
V
Collector-to-Emitter Voltage
VCEO
800
V
Emitter-to-Base Voltage
VEBO
5V
Collector Current
IC
20
A
Collector Current (Pulse)
ICP
40
A
Collector Dissipation
PC
3.5
W
Tc=25
°C
140
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=800V, IE=0
10
A
Collector Cutoff Current
ICES
VCE=1500V, RBE=0
1.0
mA
Collector Sustain Voltage
VCEO(sus)
IC=100mA, IB=0
800
V
Emitter Cutoff Current
IEBO
VEB=4V, IC=0
1.0
mA
DC Current Gain
hFE(1)
VCE=5V, IC=1A
15
hFE(2)
VCE=5V, IC=16A
4
7
Collectoe-to-Emitter Saturation Voltage
VCE(sat)
IC=14.4A, IB=3.6A
3
V
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=14.4A, IB=3.6A
1.5
V
Storage Time
tstg
IC=10A, IB1=2A, IB2=--4A
3.0
s
Fall Time
tf
IC=10A, IB1=2A, IB2=--4A
0.2
s
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
2SC5722
NPN Triple Diffused Planar Silicon Transistor
Ultrahigh-Definition CRT Display Horizontal
Deflection Output Applications
O2203 TS IM TA-3625
Ordering number : ENN7402
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC57250SL | 功能描述:TRAN NPN HF 15VCEO 2.0A MINI 3P RoHS:否 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SC5729T106Q | 功能描述:兩極晶體管 - BJT NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5729T106R | 功能描述:兩極晶體管 - BJT NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5730KT146Q | 功能描述:兩極晶體管 - BJT NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5730KT146R | 功能描述:兩極晶體管 - BJT NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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