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參數資料
| 型號： | 2SC5793 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 20 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-3PMLH, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 48K |
| 代理商： | 2SC5793 |
2SC5793
No.7451-1/4
Features
High speed.
High breakdown voltage (VCBO=1600V).
High reliability (Adoption of HVP process).
Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
1600
V
Collector-to-Emitter Voltage
VCEO
800
V
Emitter-to-Base Voltage
VEBO
5V
Collector Current
IC
20
A
Collector Current (Pulse)
ICP
40
A
Collector Dissipation
PC
3.0
W
Tc=25°C95
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=800V, IE=0A
10
A
Collector Cutoff Current
ICES
VCE=1600V, RBE=0
1.0
mA
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=10mA, RBE=∞
800
V
Emitter Cutoff Current
IEBO
VEB=4V, IC=0A
1.0
mA
DC Current Gain
hFE1VCE=5V, IC=1A
10
hFE2VCE=5V, IC=15A
4
7
Continued on next page.
Ordering number : EN7451A
13107KD TI IM TC-00000483 / 31504 TS IM TA-100375
SANYO Semiconductors
DATA SHEET
2SC5793
NPN Triple Diffused Planar Silicon Transistor
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
's products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC5793-YD | 制造商:ON Semiconductor 功能描述: |
| 2SC5808-TL-E | 制造商:SANYO 功能描述:NPN 400V 2.5A 20 to 50 TP-FA Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR NPN 700V 2.5A TO-251 制造商:Sanyo 功能描述:0 |
| 2SC5810(TE12L,F) | 功能描述:MOSFET Power Trans 100V 0.17V Vce 85ns RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SC581300L | 功能描述:TRANS NPN 80VCEO 1.5A MINI-3P RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SC5819(TE12L,F) | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR NPN 20V 1.5A SC-62 |
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