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參數資料
| 型號： | 2SC5761-T2FB |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | M04, THIN, SUPERMINI MINIMOLD PACKAGE-4 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 75K |
| 代理商： | 2SC5761-T2FB |
DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
NPN SILICON GERMANIUM RF TRANSISTOR
2SC5761
NPN SiGe RF TRANSISTOR FOR
LOW NOISE
HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
Document No. PU10212EJ02V0DS (2nd edition)
Date Published May 2003 CP(K)
Printed in Japan
The mark
! shows major revised points.
NEC Compound Semiconductor Devices 2001, 2003
FEATURES
Ideal for low noise
high-gain amplification
NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz
SiGe technology (fT = 60 GHz, fmax = 60 GHz)
Flat-lead 4-pin thin-type super minimold (M04) package
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC5761
50 pcs (Non reel)
8 mm wide embossed taping
2SC5761-T2
3 kpcs/reel
Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25
°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
8.0
V
Collector to Emitter Voltage
VCEO
2.3
V
Emitter to Base Voltage
VEBO
1.2
V
Collector Current
IC
35
mA
Total Power Dissipation
Ptot
Note
80
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
65 to +150
°C
Note Mounted on 1.08 cm
2
× 1.0 mm (t) glass epoxy substrate
THERMAL RESISTANCE
Parameter
Symbol
Value
Unit
Junction to Case Resistance
Rth (j-c)
150
°C/W
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