- 您現在的位置：買賣IC網 > PDF目錄371519 > 2SC5792 (Sanyo Electric Co.,Ltd.) IC - FLASH, 128 MBIT (8M X 16/4M X 32), 3.3V, 80 F PDF資料下載
參數資料
| 型號： | 2SC5792 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | IC - FLASH, 128 MBIT (8M X 16/4M X 32), 3.3V, 80 F |
| 中文描述： | 超高清晰度CRT顯示器水平偏轉輸出應用 |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 31K |
| 代理商： | 2SC5792 |
2SC5792
No.6994-1/4
Features
High speed.
High breakdown voltage(VCBO=1600V).
High reliability(Adoption of HVP process).
Adoption of MBIT process.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VCBO
VCEO
VEBO
IC
ICP
Conditions
Ratings
Unit
V
V
V
A
A
W
W
°
C
°
C
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
1600
800
5
15
35
3.0
85
150
Collector Dissipation
PC
Tc=25
°
C
Junction Temperature
Storage Temperature
Tj
Tstg
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Collector Cutoff Current
ICBO
ICES
V(BR)CEO
IEBO
VCB=800V, IE=0
VCE=1600V, RBE=0
IC=10mA, IB=
∞
VEB=4V, IC=0
10
1.0
μ
A
mA
V
mA
Collector-to-Emitter Breakdown Voltage
Emitter Cutoff Current
800
1.0
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6994A
2SC5792
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Package Dimensions
unit : mm
2174A
[2SC5792]
52003 TS IM TA-100439 / 62001 TS IM TA-3325
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PMLH
2
5
2
0
2
4
16.0
3.4
2.0
2.8
2.1
5.45
5.45
0.7
0.9
3
8
5.6
3.1
1
2
3
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC5809 | Shrink Tubing; Tubing Size Diameter:0.75"; Wall Thickness Recovered Nominal:0.065"; Inner Diameter Max Recovered:0.313"; Expanded Inner Diameter:0.750"; Material:Polyolefin |
| 2SC5810 | TOSHIBA Transistor Silicon NPN Epitaxial Type |
| 2SC5811 | Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications |
| 2SC5813 | Silicon NPN epitaxial planar type |
| 2SC5819 | High-Speed Switching Applications DC-DC Converter Applications |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC5793-YD | 制造商:ON Semiconductor 功能描述: |
| 2SC5808-TL-E | 制造商:SANYO 功能描述:NPN 400V 2.5A 20 to 50 TP-FA Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR NPN 700V 2.5A TO-251 制造商:Sanyo 功能描述:0 |
| 2SC5810(TE12L,F) | 功能描述:MOSFET Power Trans 100V 0.17V Vce 85ns RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SC581300L | 功能描述:TRANS NPN 80VCEO 1.5A MINI-3P RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SC5819(TE12L,F) | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR NPN 20V 1.5A SC-62 |
發布緊急采購，3分鐘左右您將得到回復。