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參數(shù)資料
型號: 2SC5858
元件分類: 功率晶體管
英文描述: 22 A, 750 V, NPN, Si, POWER TRANSISTOR
封裝: 2-21F2A, 3 PIN
文件頁數(shù): 1/6頁
文件大小: 232K
代理商: 2SC5858
2SC5858
2006-11-22
1
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5858
HORIZONTAL DEFLECTION OUTPUT FOR
HDTV, DIGITAL TV, PROJECTION TV
High Voltage
: VCBO = 1700 V
Low Saturation Voltage
: VCE (sat) = 1.5 V (Max)
High Speed
: tf(2) = 0.1 s (Typ.)
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
CollectorBase Voltage
VCBO
1700
V
CollectorEmitter Voltage
VCEO
750
V
EmitterBase Voltage
VEBO
5
V
DC
IC
22
Collector Current
Pulse
ICP
44
A
Base Current
IB
11
A
Collector Power Dissipation
PC
200
W
Junction Temperature
Tj
150
°C
Storage Temperature Range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-21F2A
Weight: 9.75 g (typ.)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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2SC58630QL 功能描述:TRANS NPN 300VCEO 70MA MINI-3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發(fā)射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
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2SC5865TL 制造商:Rohm 功能描述:NPN 60V 1A 120 to 390 TSMT3 Cut Tape 制造商:ROHM Semiconductor 功能描述:Semi, Bipolar, Transistor, ROHM, TSMT3,
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