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參數資料
| 型號： | 2SD0638 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | For Medium-Power General Amplification |
| 中文描述： | 500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | M-A1, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 73K |
| 代理商： | 2SD0638 |
Transistors
2SD0638
(2SD638)
Silicon NPN epitaxial planar type
1
Publication date: November 2002
SJC00193BED
For medium-power general amplification
Complementary to 2SB0643 (2SB643)
■
Features
Low collector-emitter saturation voltage V
CE(sat)
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
30
V
Collector-emitter voltage (Base open)
V
CEO
25
V
Emitter-base voltage (Collector open)
V
EBO
I
C
7
V
Collector current
0.5
A
Peak collector current
I
CP
1
A
Collector power dissipation
*
P
C
T
j
600
mW
Junction temperature
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
V
CEO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
20 V, I
B
=
0
30
V
Collector-emitter voltage (Base open)
25
V
Emitter-base voltage (Collector open)
V
EBO
7
V
Collector-base cutoff current (Emitter open)
I
CBO
I
CEO
h
FE1 *
0.1
μ
A
μ
A
Base-emitter saturation voltage
1
Forward current transfer ratio
V
CE
= 10 V, I
C
= 10 mA
85
340
h
FE2
V
CE(sat)
V
CE
= 10 V, I
C
= 500 mA
I
C
=
300 mA, I
B
=
30 mA
V
CB
=
10 V, I
E
=
50 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
40
90
Collector-emitter saturation voltage
0.35
0.6
V
Transition frequency
f
T
C
ob
200
MHz
Collector output capacitance
(Common base, input open circuited)
6
15
pF
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
6.9
±
0.1
2.5
±
0.1
(1.0)
(
(1.5)
(0.85)
0.55
±
0.1
0.45
±
0.05
(2.5)
(2.5)
2
1
3
R 0.7
R 0.9
(
3
±
0
4
±
0
4
±
0
2
±
0
1
±
0
2
±
0
1
±
0
(1.5)
1: Base
2: Collector
3: Emitter
M-A1 Package
Rank
Q
R
S
h
FE1
85 to 170
120 to 240
170 to 340
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Note) The part number in the parenthesis shows conventional part number.
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| 2SD0662B | For High Breakdown Voltage General Amplification |
| 2SD0814A | For High Breakdown Voltage Low-Frequency And Low-Noise |
| 2SD0814 | 0.01UF +/-10% 80V AXI |
| 2SD814 | Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD0638(2SD638) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:小信號デバイス － 小信號トランジスタ － 汎用低周波増幅 |
| 2SD0638/2SD0639(2SD638/2SD639) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SD0638. 2SD0639 (2SD638. 2SD639) - NPN Transistor |
| 2SD0638Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 500MA I(C) | SC-71 |
| 2SD0638R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 500MA I(C) | SC-71 |
| 2SD0638S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 500MA I(C) | SC-71 |
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