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參數資料
| 型號： | 2SD1011S |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 20 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | SC-43A, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 167K |
| 代理商： | 2SD1011S |
1
Transistor
2SD1011
Silicon NPN epitaxial planer type
For low-frequency amplification
s Features
q
High foward current transfer ratio hFE.
q
Low collector to emitter saturation voltage VCE(sat).
q
High emitter to base voltage VEBO.
s Absolute Maximum Ratings (Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
5.0
±0.2
4.0
±0.2
5.1
±0.2
13.5
±0.5
0.45
+0.2
–0.1
0.45
+0.2
–0.1
1.27
2.3
±0.2
2.54
±0.15
2
13
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
100
15
50
20
300
150
–55 ~ +150
Unit
V
mA
mW
C
s Electrical Characteristics (Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Noise voltage
Symbol
ICBO
ICEO
VCBO
VCEO
VEBO
hFE
*
VCE(sat)
fT
NV
Conditions
VCB = 60V, IE = 0
VCE = 60V, IB = 0
IC = 10A, IE = 0
IC = 1mA, IB = 0
IE = 10A, IC = 0
VCE = 10V, IC = 2mA
IC = 10mA, IB = 1mA
VCB = 10V, IE = –2mA, f = 200MHz
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100k, Function = FLAT
min
100
15
400
typ
0.05
200
80
max
100
1
1200
0.2
Unit
nA
A
V
MHz
mV
*h
FE Rank classification
Rank
R
S
hFE
400 ~ 800
600 ~ 1200
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD1012 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTOR SPA20V .7A .25W ECB |
| 2SD1012F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 700MA I(C) | SPAK |
| 2SD1012F-SPA | 功能描述:兩極晶體管 - BJT BIP NPN 0.7A 15V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD1012F-SPA-AC | 功能描述:兩極晶體管 - BJT BIP NPN 0.7A 15V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD1012G | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 700MA I(C) | SPAK |
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