- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄369141 > 2SD1336 TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 6A I(C) | SOT-186 PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SD1336 |
| 英文描述： | TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 6A I(C) | SOT-186 |
| 中文描述： | 晶體管|晶體管|達(dá)林頓|叩| 100V的五（巴西）總裁| 6A條一（c）|的SOT - 186 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 51K |
| 代理商： | 2SD1336 |
1
Transistor
2SD1302
Silicon NPN epitaxial planer type
For low-voltage output amplification
For muting
For DC-DC converter
I
Features
G
Low collector to emitter saturation voltage V
CE(sat)
.
G
Low ON resistance R
on
.
G
High foward current transfer ratio h
FE
.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
5.0
±
0.2
4.0
±
0.2
5
±
0
1
±
0
0.45
+0.2
0.45
+0.2
1.27
1.27
2
±
0
2.54
±
0.15
2
1
3
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
25
20
12
1
0.5
600
150
–55 ~ +150
Unit
V
V
V
A
A
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ON resistanse
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
R
on*3
Conditions
V
CB
= 25V, I
E
= 0
I
C
= 10
μ
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 2V, I
C
= 0.5A
*2
V
CE
= 2V, I
C
= 1A
*2
I
C
= 0.5A, I
B
= 20mA
I
C
= 0.5A, I
B
= 50mA
V
CB
= 10V, I
E
= –50mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
25
20
12
200
60
typ
0.13
200
10
1.0
max
100
800
0.4
1.2
Unit
nA
V
V
V
V
V
MHz
pF
*1
h
FE1
Rank classification
Rank
R
S
T
h
FE1
200 ~ 350
300 ~ 500
400 ~ 800
*2
Pulse measurement
*3
R
on
Measurement circuit
V
B
I
B
=1mA
R
on
= V
1000(
)
A
–V
B
f=1kHz
V=0.3V
1k
V
A
V
V
V
B
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD1336A | Low-Power, SC70/SOT µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay |
| 2SD1383KA | Low-Power, Single/Dual-Level Battery Monitors with Hysteresis |
| 2SD1383KB | TRANSISTOR | BJT | DARLINGTON | NPN | 32V V(BR)CEO | 300MA I(C) | SC-59 |
| 2SD1366A | Silicon NPN Epitaxial |
| 2SD1367 | Silicon NPN Epitaxial |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1339 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 1500V 3.5A 50W BEC |
| 2SD1341 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTORTO-31500V 5A 50W BEC |
| 2SD1341P | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 |
| 2SD1347S | 制造商:ON Semiconductor 功能描述: 制造商:Sony Semiconductor Solutions Division 功能描述: |
| 2SD1347T-AE | 制造商:SANYO Semiconductor Co Ltd 功能描述: 制造商:Sony Semiconductor Solutions Division 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。