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參數資料
型號: 2SD1412A
元件分類: 功率晶體管
英文描述: 7 A, 50 V, NPN, Si, POWER TRANSISTOR
封裝: LEAD FREE, 2-10R1A, 3 PIN
文件頁數: 1/5頁
文件大小: 159K
代理商: 2SD1412A
2SD1412A
2006-11-21
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD1412A
High-Current Switching Applications
Power Amplifier Applications
Low saturation voltage: VCE (sat) = 0.4 V (max) at IC = 4 A
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
70
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
7
A
Base current
IB
1
A
Ta = 25°C
2.0
Collector power
dissipation
Tc = 25°C
PC
30
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
相關PDF資料
PDF描述
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