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參數(shù)資料
| 型號(hào)： | 2SD1581 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 104K |
| 代理商： | 2SD1581 |
1998
Document No. D16197EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTOR
2SD1581
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SD1581 is a single type super high hFE transistor and low
collector saturation voltage and low power loss. This transistor is
ideal for use in high current drives such as mortars, relays, and
ramps.
FEATURES
Ultra high hFE
hFE = 800 to 3200 (@ VCE = 5.0 V, IC = 500 mA)
Low collector saturation voltage
VCE(sat) = 0.18 V TYP. (@ IC = 1.0 A, IB = 10 mA)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
30
V
Collector to emitter voltage
VCEO
25
V
Emitter to base voltage
VEBO
15
V
Collector current (DC)
IC(DC)
2.0
A
Collector current (pulse)
IC(pulse)*3.0
A
Total power dissipation
PT
1.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
*PW
≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB = 30 V, IE = 0
100
nA
Emitter cutoff current
IEBO
VEB = 10 V, IC = 0
100
nA
DC current gain
hFE1
VCE = 5.0 V, IC = 500 mA
*
800
1500
3200
DC current gain
hFE2
VCE = 5.0 V, IC = 2.0 mA
*
400
DC base voltage
VBE
VCE = 5.0 V, IC = 300 mA
*
600
660
700
mV
Collector saturation voltage
VCE(sat)
IC = 1.0 A, IB = 10 mA
*
0.18
0.30
V
Base saturation voltage
VBE(sat)
IC = 1.0 A, IB = 10 mA
*
0.83
1.2
V
Output capacitance
Cob
VCB = 10 V, IE = 0, f = 1.0 MHz
26
35
pF
Gain bandwidth product
fT
VCE = 10 V, IE =
500 mA
150
350
MHz
** Pulse test PW
≤ 350
s, duty cycle ≤ 2% per pulsed
hFE1/hFE CLASSIFICATION M : 800 to 1600 L : 1200 to 2400 K : 2000 to 3200
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1581-AZ-L | 制造商:Renesas Electronics 功能描述:Bulk |
| 2SD1581T | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1581-T | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR SUB B1BACC000010PANASONIC |
| 2SD1582 | 制造商:Distributed By MCM 功能描述:SUB ONLY NEC TRANSISTOR SP-8 60V 1A 1W ECB |
| 2SD1582-K-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
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