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參數資料
| 型號： | 2SD1669-S |
| 元件分類： | 功率晶體管 |
| 英文描述： | 12 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220ML, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 49K |
| 代理商： | 2SD1669-S |
2SB1136 / 2SD1669
No.2092-1/4
Applications
Relay drivers, high-speed inverters, converters, and other general high-current switching applications.
Features
Low-saturation collector-to-emitter voltage : VCE(sat)= --0.5V (PNP), 0.4V (PNP) max.
Wide ASO leading to high resistance to breakdown.
Micaless package facilitating mouting.
Specifications ( ) : 2SB1136
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--)60
V
Collector-to-Emitter Voltage
VCEO
(--)50
V
Emitter-to-Base Voltage
VEBO
(--)6
V
Collector Current
IC
(--12
A
Collector Current (Pulse)
ICP
(--)15
A
Collector Dissipation
PC
2W
Tc=25°C30
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)40V, IE=0A
(--)0.1
mA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0A
(--)0.1
mA
Continued on next page.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN2092C
52307FA TI IM TC-00000682 / O2003TN (KOTO)/92098HA (KT)/10996TS (KOTO) 8-8812/4277AT, TS
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
's products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
SANYO Semiconductors
DATA SHEET
2SB1136 / 2SD1669 PNP / NPN Epitaxial Planar Silicon Transistors
50V / 12A Switching Applications
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| 2SD1683S | 功能描述:兩極晶體管 - BJT BIP NPN 4A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD1683T | 功能描述:兩極晶體管 - BJT BIP NPN 4A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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