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參數資料
| 型號： | 2SD1751 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion planar type(For power amplification) |
| 中文描述： | 2 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | IPAK-3 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 48K |
| 代理商： | 2SD1751 |
1
Power Transistors
2SD1751
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB1170
I
Features
G
High forward current transfer ratio h
FE
which has satisfactory
linearity
G
Low collector to emitter saturation voltage V
CE(sat)
G
I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
60
60
6
4
2
15
1.3
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CES
I
CEO
I
EBO
V
CEO
h
FE1
h
FE2*
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CE
= 60V, V
BE
= 0
V
CE
= 30V, I
B
= 0
V
EB
= 6V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 4V, I
C
= 0.1A
V
CE
= 4V, I
C
= 1A
V
CE
= 4V, I
C
= 1A
I
C
= 2A, I
B
= 0.2A
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 1A, I
B1
= 0.1A, I
B2
= – 0.1A
min
60
35
70
typ
20
0.2
3.5
0.7
max
200
300
1
250
1.2
2
Unit
μ
A
μ
A
mA
V
V
V
MHz
μ
s
μ
s
μ
s
*
h
FE2
Rank classification
Rank
Q
P
h
FE2
70 to 150
120 to 250
T
C
=25
°
C
Ta=25
°
C
Unit: mm
1:Base
2:Collector
3:Emitter
I Type Package
Unit: mm
1:Base
2:Collector
3:Emitter
I Type Package (Y)
7
±
0
7.0
±
0.3
3.0
±
0.2
3.5
±
0.2
1
+
–
0
±
0
1
±
0
4.6
±
0.4
2
1
3
1.1
±
0.1
0.75
±
0.1
2.3
±
0.2
0.85
±
0.1
0.4
±
0.1
7.0
±
0.3
0.75
±
0.1
2.3
±
0.2
4.6
±
0.4
1.1
±
0.1
1
±
0
7
±
0
2.0
±
0.2
0.9
±
0.1
0 to 0.15
3.5
±
0.2
2
±
0
1
1
2
±
0
3.0
±
0.2
1
1
2
3
0 to 0.15
2.5
0.5 max.
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|---|---|
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| 2SD1757KT146Q | 功能描述:兩極晶體管 - BJT NPN 15V 0.5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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