- 您現在的位置：買賣IC網 > PDF目錄371526 > 2SD1771A (PANASONIC CORP) Silicon NPN triple diffusion planar type PDF資料下載
參數資料
| 型號： | 2SD1771A |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion planar type |
| 中文描述： | 1 A, 180 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | N-TYPE PACKAGE-3 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 73K |
| 代理商： | 2SD1771A |
1
Power Transistors
2SD1771, 2SD1771A
Silicon NPN triple diffusion planar type
For power amplification
For TV vertical deflection output
Complementary to 2SB1191 and 2SB1191A
I
Features
G
High collector to emitter V
CEO
G
Large collector power dissipation P
C
G
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
200
200
150
180
6
2
1
25
1.3
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
2SD1771
2SD1771A
2SD1771
2SD1771A
T
C
=25
°
C
Ta=25
°
C
*
h
FE1
Rank classification
Rank
Q
P
h
FE1
60 to 140
100 to 240
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
V
CEO
V
EBO
h
FE1*
h
FE2
V
BE
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 200V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 5mA, I
B
= 0
I
E
= 0.5mA, I
C
= 0
V
CE
= 10V, I
C
= 100mA
V
CE
= 10V, I
C
= 300mA
V
CE
= 10V, I
C
= 300mA
I
C
= 500mA, I
B
= 50mA
V
CE
= 10V, I
C
= 100mA, f = 1MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
150
180
6
60
50
typ
20
27
max
50
50
240
1
1
Unit
μ
A
μ
A
V
V
V
V
MHz
pF
2SD1771
2SD1771A
Unit: mm
1:Base
2:Collector
3:Emitter
N Type Package
8.5
±
0.2
6.0
±
0.5
1
±
0
1
2
1
±
0
1.5max.
0.8
±
0.1
5.08
±
0.5
2.54
±
0.3
1.1max.
0.5max.
1.0
±
0.1
3.4
±
0.3
2
1
3
Unit: mm
3.4
±
0.3
8.5
±
0.2
4
±
0
2
1
±
0
1
±
0
4
±
0
6.0
±
0.3
2.54
±
0.3
5.08
±
0.5
1.0
±
0.1
0.8
±
0.1
1
+
–
3
+
–
0 to 0.4
1.1 max.
R0.5
R0.5
1
2
3
1:Base
2:Collector
3:Emitter
N Type Package (DS)
相關PDF資料 |
PDF描述 |
|---|---|
| 2SD1772 | Silicon NPN triple diffusion planar type |
| 2SD1772A | Silicon NPN triple diffusion planar type |
| 2SD1773 | Silicon NPN triple diffusion planar type Darlington(For midium speed switching) |
| 2SD1775 | Silicon NPN triple diffusion planar type(For high-speed switching and high current amplification ratio) |
| 2SD1775A | Silicon NPN triple diffusion planar type(For high-speed switching and high current amplification ratio) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD1772A | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO220FA200V 1A 2W BCE |
| 2SD1773 | 功能描述:TRANS NPN 120VCEO 8A TO-220F RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD1774A | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR |
| 2SD1776A | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO220FA100V 2A 2W BCE |
| 2SD1776-P0 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
發布緊急采購，3分鐘左右您將得到回復。