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參數資料
| 型號： | 2SD1767T100/R |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 700 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SC-62, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 69K |
| 代理商： | 2SD1767T100/R |
2SD1767 / 2SD1859
Transistors
Rev.A
1/2
Medium power transistor (80V, 0.7A)
2SD1767 / 2SD1859
Features
1) High breakdown voltage, BVCEO=80V, and
high current, IC=0.7A.
2) Complements the 2SB1189 / 2SB1238.
Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
80
5
0.7
2
1
150
55 to +150
Unit
V
A(DC)
1
A(Pulse)
0.5
3
2
1
2SD1859
2SD1767
W
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector power
dissipation
1 Pw=10ms, duty=1/2
2 When mounted on a 40×40×0.7 mm ceramic board.
3 Printed circuit board 1.7 mm thick, collector plating 1cm2 or larger.
Packaging specifications and hFE
Type
2SD1767
MPT3
PQR
DC
T100
1000
2SD1859
ATV
QR
TV2
2500
Denotes hFE
Package
hFE
Marking
Code
Basic ordering unit (pieces)
External dimensions (Unit : mm)
(1) Emitter
(2) Collector
(3) Base
0.45
1.05
Taping specifications
0.5
(1)
0.65Max.
2.54
(2)
2.54
(3)
6.8
1.0
14.5
0.9
4.4
2.5
2SD1767
ROHM : MPT3
EIAJ : SC-62
2SD1859
ROHM : ATV
(1) Base
(2) Collector
(3) Emitter
1.5
0.4
1.5
0.4
1.6
0.5
3.0
0.4
1.5
(3)
4.5
(1)
(2)
0.5
4.0
2.5
1.0
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
fT
Cob
80
5
0.2
120
10
0.5
0.4
V
A
V
MHz
pF
IC
=50A
IC
=2mA
IE
=50A
VCB
=50V
VEB
=4V
hFE
120
390
VCE/IC
=3V/0.1A
IC/IB
=500mA/50mA
VCE
=10V, IE=50mA, f=100MHz
VCB
=10V, IE=0A, f=1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD1768STPQ | 功能描述:兩極晶體管 - BJT NPN DRIVER RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD1768STPR | 功能描述:兩極晶體管 - BJT TRANS GP BJT NPN 80V 1A 3PIN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD177 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTORTO-3120V 10A 100W BEC |
| 2SD1770A | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR |
| 2SD1772A | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO220FA200V 1A 2W BCE |
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