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參數(shù)資料
| 型號(hào)： | 2SD1894P |
| 廠商： | PANASONIC CORP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 7 A, 140 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TOP-3F-A1, FULL PACK-3 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 251K |
| 代理商： | 2SD1894P |
Power Transistors
1
Publication date: September 2003
SJD00234BED
2SD1894
Silicon NPN triple diffusion planar type darlington
For power amplification
Complementary to 2SB1254
■ Features
Optimum for 60 W HiFi output
High forward current transfer ratio h
FE
Low collector-emitter saturation voltage V
CE(sat)
Full-pack package which can be installed to the heat sink with one
screw
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C = 25°C ± 3°C
15.0±0.3
5.0±0.2
11.0±0.2
2.0±0.2
2.0±0.1
0.6±0.2
1.1±0.1
5.45±0.3
10.9±0.5
123
21.0
±
0.5
16.2
±
0.5
Solder
Dip
(3.5)
15.0
±
0.2
(0.7)
φ 3.2±0.1
(3.2)
Unit: mm
1: Base
2: Collector
3: Emitter
EIAJ: SC-92
TOP-3F-A1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
160
V
Collector-emitter voltage (Base open)
VCEO
140
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
7A
Peak collector current
ICP
12
A
Collector power dissipation
PC
70
W
Ta = 25°C3
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Internal Connection
B
C
E
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = 30 mA, IB = 0
140
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 160 V, IE = 0
100
A
Collector-emitter cutoff current (Base open)
ICEO
VCE
= 140 V, I
B
= 0
100
A
Emitter-base cutoff current (Collector open)
IEBO
VEB = 5 V, IC = 0
100
A
Forward current transfer ratio
hFE1
VCE = 5 V, IC = 1 A
2 000
hFE2 *
VCE
= 5 V, I
C
= 6 A
5 000
30 000
Collector-emitter saturation voltage
VCE(sat)
IC = 6 A, IB = 6 mA
2.5
V
Base-emitter saturation voltage
VBE(sat)
IC = 6 A, IB = 6 mA
3.0
V
Transition frequency
fT
VCE
= 10 V, I
C
= 0.5 A, f = 1 MHz
20
MHz
Turn-on time
ton
IC
= 6 A, I
B1
= 6 mA, I
B2
= 6 mA
2.5
s
Storage time
tstg
VCC = 50 V
5.0
s
Fall time
tf
2.5
s
Rank
Q
S
P
hFE2
5 000 to 15 000 7 000 to 21 000 8 000 to 30 000
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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| 2SD1898T100P | 功能描述:兩極晶體管 - BJT DVR NPN 80V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD1898T100Q | 功能描述:兩極晶體管 - BJT NPN 80V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD1898T100R | 功能描述:兩極晶體管 - BJT NPN 80V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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