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參數資料
| 型號： | 2SD1934P |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | ROHS COMPLIANT, TO-92NL-A1, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 231K |
| 代理商： | 2SD1934P |
Transistors
1
Publication date: April 2003
SJC00231BED
2SD1934
Silicon NPN epitaxial planar type
For low-frequency power amplification
For stroboscope
■ Features
Low collector-emitter saturation voltage V
CE(sat)
Satisfactory operation performances at high efficiency with the low-
voltage power supply.
Allowing supply with the radial taping
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
40
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
7V
Collector current
IC
5A
Peak collector current
ICP
8A
Collector power dissipation
PC
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC
= 1 mA, I
B
= 020
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 07
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 10 V, IE = 0
0.1
A
Forward current transfer ratio *
1
hFE1 *
2
VCE = 2 V, IC = 0.5 A
180
600
hFE2
VCE = 2 V, IC = 2.0 A
150
Collector-emitter saturation voltage *
1
VCE(sat)
IC = 3.0 A, IB = 0.1 A
1
V
Transition frequency
fT
VCB
= 6 V, I
E
= 50 mA, f = 200 MHz
150
MHz
Collector output capacitance
Cob
VCB
= 20 V, I
E
= 0, f = 1 MHz
50
pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
2.3
±
0.2
5.0±0.2
0.7±0.1
4.0±0.2
8.0
±
0.2
0.7
±
0.2
13.5
±
0.5
2.54±0.15
(1.27)
0.45
+0.2
–0.1
0.45
+0.15
–0.1
13
2
1: Emitter
2: Collector
3: Base
TO-92NL-A1 Package
Rank
P
Q
R
hFE1
180 to 270
230 to 380
340 to 600
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD1936T-SSH | 制造商:ON Semiconductor 功能描述: |
| 2SD1938 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1938(F)-S(TX) | 制造商:Panasonic Industrial Company 功能描述: |
| 2SD1938FSL | 功能描述:TRANS NPN AF AMP 20VCEO MINI RoHS:否 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD1938FTL | 功能描述:TRANS NPN AF AMP 20VCEO MINI RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
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