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參數資料
型號: 2SD1938F
廠商: Panasonic Corporation
英文描述: Silicon NPN epitaxial planar type
中文描述: 硅型瑞展
文件頁數: 1/3頁
文件大小: 88K
代理商: 2SD1938F
Transistors
2SD1938(F)
Silicon NPN epitaxial planar type
1
Publication date: August 2004
SJC00313AED
For low-voltage output amplification
For muting
For DC-DC converter
Features
Low ON resistance R
on
High forward current transfer ratio h
FE
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
50
V
Collector-emitter voltage (Base open)
V
CEO
V
EBO
20
V
Emitter-base voltage (Collector open)
25
V
Collector current
I
C
300
mA
Peak collector current
I
CP
P
C
500
mA
Collector power dissipation
200
mW
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
I
C
=
1 mA, I
B
=
0
V
CE
=
2 V, I
C
=
4 mA
V
CB
=
50 V, I
E
=
0
V
EB
=
25 V, I
C
=
0
20
V
Base-emitter voltage
V
BE
I
CBO
0.6
V
Collector-base cutoff current (Emitter open)
0.1
μ
A
μ
A
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*1
I
EBO
0.1
h
FE
V
CE
= 2 V, I
C
= 4 mA
I
C
=
30 mA, I
B
=
3 mA
V
CB
=
6 V, I
E
=
4 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
500
2
500
Collector-emitter saturation voltage
V
CE(sat)
0.1
V
Transition frequency
f
T
C
ob
80
MHz
Collector output capacitance
(Common base, input open circuited)
ON resistance
*2
7
pF
R
on
1.0
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*1: Rank classification
*2: R
on
Measuremet circuit
Rank
S
T
No rank
h
FE
500 to 1
500
800 to 2
500
500 to 2
500
V
V
1 k
R
on
=
V
B
×
1
000 (
)
A
V
B
f
=
1 kHz
V
=
0.3 V
V
B
I
B
=
1 mA
V
A
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
JEDEC: SOT-346
Mini3-G1 Package
Marking symbol: 3W
0.40
+0.10
(
1
+
2
+
2
1
3
(0.95) (0.95)
1.9
±
0.1
2.90
+0.20
0.16
+0.10
0
±
0
5
10
0
1
+
1
+
Product of no-rank classification is not marked.
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相關代理商/技術參數
參數描述
2SD1938FSL 功能描述:TRANS NPN AF AMP 20VCEO MINI RoHS:否 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應商設備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
2SD1938FTL 功能描述:TRANS NPN AF AMP 20VCEO MINI RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應商設備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
2SD1943 制造商:Distributed By MCM 功能描述:SUB ONLY ROHM TRANSISTOR TO-220AB 80V 3A 40W BCE
2SD1947A(F) 制造商:Toshiba America Electronic Components 功能描述:Semi, Bipolar, Transistor, NPN, Power, D
2SD1949Q 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
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