- 您現在的位置：買賣IC網 > PDF目錄33434 > 2SD1953 (SANYO SEMICONDUCTOR CO LTD) 1500 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126 PDF資料下載
參數資料
| 型號： | 2SD1953 |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1500 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 74K |
| 代理商： | 2SD1953 |
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
120V/1.5A Driver Applications
Ordering number:EN2507
2SD1953
31099TH (KT)/4227TA, TS No.2507–1/3
Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2009A
[2SD1953]
Applications
Motor drivers, printer hammer drivers, relay drivers.
Features
Darlington connection.
High DC current gain.
Low dependence of DC current gain on temperature.
C
Electrical Characteristics at Ta = 25C
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
Cs
g
n
i
t
a
Rt
i
n
U
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
o
t
c
e
ll
o
CV
O
B
C
0
2
1V
e
g
a
t
l
o
V
r
e
t
i
m
E
-
o
t
-
r
o
t
c
e
ll
o
CV
O
E
C
0
2
1V
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
e
t
i
m
EV
O
B
E
6V
t
n
e
r
u
C
r
o
t
c
e
ll
o
CIC
5
.
1A
)
e
s
l
u
P
(
t
n
e
r
u
C
r
o
t
c
e
ll
o
CI P
C
3A
n
o
i
t
a
p
i
s
i
D
r
o
t
c
e
ll
o
CPC
1W
0
1W
e
r
u
t
a
r
e
p
m
e
T
n
o
i
t
c
n
u
Jj
T
0
5
1
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
Sg
t
s
T
0
5
1
+
o
t
5
–
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
C
s
g
n
i
t
a
R
t
i
n
U
n
i
mp
y
tx
a
m
t
n
e
r
u
C
f
o
t
u
C
r
o
t
c
e
ll
o
CI
O
B
C
V B
C
I
,
V
0
1
=
E 0
=0
1A
t
n
e
r
u
C
f
o
t
u
C
r
e
t
i
m
EI
O
B
E
V B
E
I
,
V
5
=
C 0
=5
.
2A
m
n
i
a
G
t
n
e
r
u
C
D
h E
F 1V E
C
I
,
V
3
=
C
A
5
.
0
=
0
1
h E
F 2V E
C
I
,
V
3
=
C
A
1
=
0
20
0
3
e
g
a
t
l
o
V
n
o
i
t
a
r
u
t
a
S
r
e
t
i
m
E
-
o
t
-
r
o
t
c
e
ll
o
CV
)
t
a
s
(
E
C
IC
I
,
A
1
=
B
A
m
2
=
5
.
1V
e
g
a
t
l
o
V
n
o
i
t
a
r
u
t
a
S
r
e
t
i
m
E
-
o
t
-
e
s
a
BV
)
t
a
s
(
E
B
IC
I
,
A
1
=
B
A
m
2
=0
.
2V
e
g
a
t
l
o
V
n
w
o
d
k
a
e
r
B
e
s
a
B
-
o
t
-
r
o
t
c
e
ll
o
CV
O
B
C
)
R
B
(
IC
I
,
A
0
1
=
E 0
=
0
2
1V
e
g
a
t
l
o
V
n
w
o
d
k
a
e
r
B
r
e
t
i
m
E
-
o
t
-
r
o
t
c
e
ll
o
CV
O
E
C
)
R
B
(
IC
R
,
A
m
0
1
=
E
B =∞
0
2
1V
Tc=25C
8.0
4.0
7.0
11.0
1.5
15.5
3.0
1.6
0.8
0.6
0.5
2.7
4.8
2.4
1.2
12
3
3.0
相關PDF資料 |
PDF描述 |
|---|---|
| 2SD1953 | 1500 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 2SD1957G | 7 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-220FP |
| 2SD1957/G | 7 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-220FP |
| 2SD1957F | 7 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-220FP |
| 2SD2061F | 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220FP |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD1955 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR SC-64(TP)110V 3A 20W BCE |
| 2SD1957 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220FP 120V 7A 30W BCE |
| 2SD1958 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANS. TO220ML200V 1.5A 30W |
| 2SD1963T100R | 功能描述:兩極晶體管 - BJT NPN 20V 3A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD1963T100S | 功能描述:兩極晶體管 - BJT NPN 20V 3A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發布緊急采購，3分鐘左右您將得到回復。